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Photo mask and manufacturing method thereof

A manufacturing method and photomask technology, applied in the field of photomasks, can solve problems such as reading errors and achieve the effect of improving manufacturing efficiency

Inactive Publication Date: 2011-10-05
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] Therefore, after further research by the present inventors, it was found that in a photomask having a mark pattern formed by patterning a light semitransmissive film, it is necessary to pay attention to the reading conditions, in other words, according to the reading conditions of an existing device such as an exposure machine, etc. Depending on the conditions, a read error may occur

Method used

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  • Photo mask and manufacturing method thereof
  • Photo mask and manufacturing method thereof
  • Photo mask and manufacturing method thereof

Examples

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Effect test

reference example 1

[0083] Offset part: +0.5μm

[0084] Pitch width of line and space pattern: 6.0μm (line width: 3.5μm, space width: 2.5μm), 5.0μm (line width: 3.0μm, space width: 2.0μm), 4.4μm (line width: 2.7μm, Gap width: 1.7μm)

[0085] Transmittance of line pattern: 3% to 20%

reference example 2

[0087]Offset part: +0.8μm

[0088] Pitch width of line and space pattern: 7.0μm (line width: 4.3μm, space width: 2.7μm), 6.0μm (line width: 3.8μm, space width: 2.2μm), 5.0μm (line width: 3.3μm, Gap width: 1.7μm)

[0089] Transmittance of line pattern: 3% to 20%

[0090]

[0091] Offset part: +0.5μm

[0092] Pitch width of line and space pattern: 8.0μm (line width: 4.5μm, space width: 3.5μm), 7.0μm (line width: 4.0μm, space width: 3.0μm), 6.0μm (line width: 3.5μm, Gap width: 2.5μm), 5.0μm (line width: 3.0μm, gap width: 2.0μm), 4.4μm (line width: 2.7μm, gap width: 1.7μm)

[0093] Transmittance of line pattern: 0%

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Abstract

The invention relates to a photo mask and a manufacturing method thereof. The photo mask is formed in the following steps of transfer printing patterns located on a transfer printing pattern part on a resist film formed on a body to be performed etching, and making the resist film become the resist pattern of a mask during the etching processing procedure. The transfer printing pattern part comprises a translucent part and a semi-translucent part formed by performing composition on a semi-translucent film on a transparent substrate. A marked pattern forming part formed by a shading film is formed in the transparent substrate part different from the transfer printing pattern part.

Description

technical field [0001] The present invention relates to a photomask used in a photolithography process and a method for manufacturing the photomask. Background technique [0002] At present, there are VA (Vertical Alignment: vertical alignment) method and IPS (In Plane Switching: in-plane switching) method as methods employed in liquid crystal display devices. By applying these methods, it is possible to provide excellent dynamic images with fast liquid crystal response and sufficiently large viewing angle. In addition, by using a line and space pattern formed from a transparent conductive film in the pixel electrode portion of the liquid crystal display device to which these methods are applied, the response speed and the viewing angle can be improved. [0003] In recent years, in order to further improve the liquid crystal response speed and viewing angle, the development direction is to refine the line width (CD (Critical Dimension: Critical Dimension)) of the line and s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F7/00G02F1/1343G02F1/13G03F1/32G03F1/68G03F1/80H01L21/027
CPCG03F1/80G03F7/2063H01L21/0274H01L21/0337
Inventor 吉田光一郎
Owner HOYA CORP