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Reparation method of tungsten titanium alloy target material used in semiconductor and solar sputtering target material industries

A tungsten-titanium alloy and sputtering target technology, applied in the field of material processing, can solve the problems of easy oxidation, uneven mixing of tungsten-titanium alloy powder, and high impurity content, so as to improve high-temperature compressive strength, maintain purity, and reduce oxygen content. Effect

Active Publication Date: 2013-01-09
XIAMEN HONGLU TUNGSTEN MOLYBDENUM IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are still many defects in the tungsten-titanium alloy target produced by the preparation method of the prior art, such as uneven mixing of tungsten-titanium alloy powder, easy oxidation during the preparation process, high impurity content, and low density of the prepared tungsten-titanium alloy target. higher

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  • Reparation method of tungsten titanium alloy target material used in semiconductor and solar sputtering target material industries
  • Reparation method of tungsten titanium alloy target material used in semiconductor and solar sputtering target material industries
  • Reparation method of tungsten titanium alloy target material used in semiconductor and solar sputtering target material industries

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Embodiment 1

[0029] Embodiment 1, a method for preparing a tungsten-titanium alloy target for semiconductor and solar sputtering target industries of the present invention includes the following steps:

[0030] a. Tungsten powder with a Fischer mean particle size of 2.8 μm, titanium powder with a Fischer mean particle size of 60 μm, and titanium hydride powder with a Fischer mean particle size of 60 μm, according to tungsten powder: titanium powder: titanium hydride powder is 7.0: 1.5: The mass ratio of 1.5 is placed in a three-dimensional mixer, and mixed for 1.5 hours at a speed of 70r / min to obtain tungsten-titanium alloy powder;

[0031] Wherein, the purity of the tungsten powder is ≥99.995%, and the purity of the titanium powder is ≥99.00%. , the purity of the titanium hydride powder is ≥99.00%;

[0032] b. Place the above-mentioned tungsten-titanium alloy powder in a vacuum hot-pressing sintering mold, compact the powder with a stainless steel plate, and allow it to fully fill the m...

Embodiment 2

[0040] Embodiment 2, a method for preparing a tungsten-titanium alloy target for semiconductor and solar sputtering target industries of the present invention includes the following steps:

[0041] a. The tungsten powder whose average Fischer particle size is 2.0 μm, the titanium powder whose average Fischer particle size is 40 μm, and the titanium hydride powder whose average Fischer particle size is 40 μm are 8.0: 0.5 according to tungsten powder: titanium powder: titanium hydride powder: The mass ratio of 1.0 is placed in a three-dimensional mixer, and mixed for 1.5 hours at a speed of 50r / min to obtain tungsten-titanium alloy powder;

[0042] Wherein, the purity of the tungsten powder is ≥99.995%, and the purity of the titanium powder is ≥99.00%. , the purity of the titanium hydride powder is ≥99.00%;

[0043] b. Place the above-mentioned tungsten-titanium alloy powder in a vacuum hot-pressing sintering mold, compact the powder with a stainless steel plate, and allow it t...

Embodiment 3

[0051] Embodiment 3, a method for preparing a tungsten-titanium alloy target for semiconductor and solar sputtering target industries of the present invention includes the following steps:

[0052] a. Tungsten powder with a Fibonacci average particle size of 1.0 μm, titanium powder with a Fibonacci average particle size of 50 μm and titanium hydride powder with a Fibonacci average particle size of 20 μm, according to tungsten powder: titanium powder: titanium hydride powder is 9.0: 1.0: The mass ratio of 0.5 is placed in a three-dimensional mixer, and mixed for 1.0h at a speed of 40r / min to obtain tungsten-titanium alloy powder;

[0053] Wherein, the purity of the tungsten powder is ≥99.995%, and the purity of the titanium powder is ≥99.00%. , the purity of the titanium hydride powder is ≥99.00%;

[0054] b. Place the above-mentioned tungsten-titanium alloy powder in a vacuum hot-pressing sintering mold, compact the powder with a stainless steel plate, and allow it to fully f...

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Abstract

The invention discloses a preparation method of a tungsten titanium alloy target material used in semiconductor and solar sputtering target material industries. The method comprises the following steps of: using titanium hydride to replace part of traditional pure titanium; placing tungsten powders, titanium powders and titanium hydride powders into a three-dimensional mixer according to a certain mass ratio; mixing the powders at a certain rotation speed to obtain tungsten titanium alloy powders; placing and sintering a mould filled with the tungsten titanium alloy powders into a vacuum hot-press sintering furnace to obtain a vacuum hot-press sintering blank; after the vacuum hot-press sintering blank is cut according to sizes, placing the vacuum hot-press sintering blank in a vacuum annealing furnace for annealing process; finally washing the surface of the target material by using an ultrasonic cleaner, so as to obtain the tungsten titanium alloy target, wherein the constituents and density of the tungsten titanium alloy target are fully conform to the requirements. The preparation method has the characteristics that the powers are mixed evenly, oxidation is has the possibilityof occurring during the preparation procedure, the content of impurity is low, and the density of the prepared tungsten titanium alloy target is high.

Description

technical field [0001] The invention relates to the technical field of material processing, in particular to a method for preparing a tungsten-titanium alloy target used in semiconductor and solar sputtering target industries. Background technique [0002] Tungsten-titanium W / Ti alloy target has been successfully applied to the diffusion barrier layer of Al, Cu and Ag wiring due to its low resistivity, good thermal stability and oxidation resistance, and the tungsten-titanium W / Ti alloy Various thin films prepared from targets such as WOx-TOx, W-Ti-C, W-Ti-O and W-Ti-N have also been widely studied and applied in the semiconductor industry and solar industry sputter coating. Therefore, tungsten-titanium W / Ti alloy target has become one of the hotspots in target preparation research. However, there are still many defects in the tungsten-titanium alloy target produced by the preparation method of the prior art, such as uneven mixing of tungsten-titanium alloy powder, easy oxi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F3/14C23C14/34C23C14/14
Inventor 于洋赖亚洲庄志刚杨福民郑艾龙石涛
Owner XIAMEN HONGLU TUNGSTEN MOLYBDENUM IND CO LTD
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