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Anodic oxidation process for semiconductor device

An anodic oxidation and semiconductor technology, applied in anodic oxidation and other directions, can solve the problems of poor film quality, control accuracy and density discount, and achieve the effects of strong voltage resistance, high precision, and high temperature resistance

Inactive Publication Date: 2011-10-12
SHANGHAI YUJIN SEMICON TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a process greatly compromises the control accuracy and density, and the quality of the final film layer is very poor

Method used

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  • Anodic oxidation process for semiconductor device
  • Anodic oxidation process for semiconductor device
  • Anodic oxidation process for semiconductor device

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Embodiment Construction

[0024] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific illustrations.

[0025] The anodic oxidation process of the semiconductor component provided by the present invention mainly realizes the control of various indicators by controlling the feeding of the current during the anodic oxidation process, thereby forming the corresponding film layer.

[0026] For this reason, the anodic oxidation process in the present invention obtains the corresponding film layer by adjusting the current density value in the anodic oxidation process. The specific controls are as follows:

[0027] The adjustment of the entire current density value is divided into five consecutive time periods, and the current density value in each time period is increased in steps, that is, the current density value in each time period is increased ever...

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Abstract

The invention discloses an anodic oxidation process for a semiconductor device. In the anodic oxidation process, a corresponding film layer is obtained by adjusting a current density value in the anodic oxidation process. By the anodic oxidation process, the accuracy and density of the film layer can be improved, and the high-quality film layer also can be obtained.

Description

Technical field: [0001] The invention relates to a coating process, in particular to an anodic oxidation process for parts of semiconductor equipment. Background technique: [0002] The full name of hard anodizing is hard anodizing. Hard anodizing of aluminum alloys is mainly used for engineering or military purposes. It is suitable for deformed aluminum alloys and more likely for die-cast alloy parts. The hard anodic oxide film generally requires a thickness of 25-150um, and the thickness of most hard anodic oxide films is 50-80um, and the hard anodic oxide film with a film thickness of less than 25um is used for the zero The thickness of the anodic oxide film for parts, wear resistance or insulation is about 50um. Under some special process conditions, it is required to produce a hard anodic oxide film with a thickness of more than 125um. However, it must be noted that the thicker the anodic oxide film, the outer layer The lower the microhardness will be, the higher the ...

Claims

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Application Information

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IPC IPC(8): C25D11/02
Inventor 刘浩伟
Owner SHANGHAI YUJIN SEMICON TECH