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Multilayer stacked inductance utilizing parallel connection of metals

A multi-layer stacking and metal technology, applied in the field of microelectronics, can solve the problem of low quality factor, achieve high inductance quality factor, and increase the effect of inductance value

Active Publication Date: 2011-11-02
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the inductance value of a single-layer inductor is more than twice that of a single-layer inductor in the same area, its quality factor is low and cannot well meet the needs of circuit design

Method used

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  • Multilayer stacked inductance utilizing parallel connection of metals
  • Multilayer stacked inductance utilizing parallel connection of metals
  • Multilayer stacked inductance utilizing parallel connection of metals

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Embodiment Construction

[0015] A multi-layer stacked inductance using metal in parallel according to the present invention; it is a multi-layer structure, including: at least three layers of metal coils on the upper and lower sides, and the slotted parts of the metal coil patterns are aligned; the other metal coils except the top metal coil The lower layer metal coils are formed by stacking and connecting multiple layers of metal; the multiple layers of metal coils are interconnected by strip-shaped through holes.

[0016] In more detail, the multi-layer stacked inductors using metal parallel connection described in the present invention, from figure 2 It can be seen that the metal widths of the upper and lower layers of inductors are the same, from figure 2 It can be seen from the perspective view that the structure of the present invention has three upper and lower layers of metal coils, and the grooved parts of the metal coil patterns are aligned; the other lower layer metal coils except the top...

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Abstract

The invention discloses a multilayer stacked inductance utilizing parallel connection of metals, which is of a multilayer structure and comprises at least three layers of metal coils from top to bottom, wherein circular slotted parts of the metal coils are aligned; the other lower-layer metal coils except the top-layer metal coil are formed by stacking and connecting multiple metal layers; and the multiple layers of metal coils are interconnected through strip-shaped holes. According to the multilayer stacked inductance provided by the invention, the inductance value under a same area is increased and higher inductance quality factor is effectively maintained by utilizing a method of increasing the effective thickness through stacking lower metals.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a laminated inductor with a stacked structure. Background technique [0002] At present, a large number of passive devices are included in integrated circuits, among which on-chip inductors are a very important one, and on-chip inductors are one of the important components of radio frequency CMOS / BiCMOS integrated circuits. In typical wireless products, inductive components have a significant impact on the overall RF performance. Therefore, the design and analysis of these inductive components have also been extensively studied. As the core component of the RF circuit, the inductor can usually affect the overall performance of the entire circuit. At present, on-chip inductors with high quality factors are widely used in RF circuit modules such as voltage-controlled oscillators and low-noise amplifiers. The stacked on-chip inductor greatly reduces the chip area and reduces the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F17/00H01F37/00H01F27/28H01F41/06H01L23/522
CPCH01F17/0013
Inventor 邱慈云徐向明蔡描
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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