Apparatus and method for measuring electron temperature of plasma in gas based on laser induction
A plasma and laser-induced technology, applied to the temperature measurement of moving fluid, thermal excitation analysis, material excitation analysis, etc., can solve the problems of plasma state influence, large measurement error, easy contamination of the probe surface, etc., and achieve measurement error Low, high precision effect
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specific Embodiment approach 1
[0021] Specific implementation mode one: combine figure 1 Illustrate this embodiment, the device for measuring plasma electron temperature in gas based on laser induction described in this embodiment, it includes Nd:YAG laser 1, focusing lens 2, airtight gas chamber 4, converging lens 6 and spectrometer 7; The gas chamber 4 is filled with the gas to be measured; the center of the three sides of the airtight chamber 4 is respectively embedded with a first quartz light-transmitting window 4-1, a second quartz light-transmitting window 4-2 and a third quartz light-transmitting window. Optical window 4-3; the laser beam emitted by the laser outlet of the Nd:YAG laser 1 passes through the focusing lens 2 and the first quartz light-transmitting window 4-1 and converges to the inner center point of the airtight air chamber 4; the said The distance between the inner central point of the airtight air chamber 4 and the focus lens 2 is the focal length of the focus lens 2; The central a...
specific Embodiment approach 2
[0022] Specific implementation mode two: combination figure 1 Describe this embodiment, the difference between this embodiment and the specific embodiment is that it also increases the barometer 3; the air pressure collection end of the barometer 3 extends into the airtight chamber 4 inside; It communicates with the gas to be measured inside the airtight chamber 4 . Other compositions and connection methods are the same as those in Embodiment 1. The purpose of increasing the barometer 3 is to monitor the air pressure inside the airtight chamber 4 .
specific Embodiment approach 3
[0023] Specific implementation mode three: combination figure 2 Describe this embodiment, the difference between this embodiment and the second embodiment is that it also increases the afterglow collection device 8; the afterglow collection device 8 is installed on the outside of the third quartz light-transmitting window 4-3; The central axis of the light collecting window of the collecting device 8 is on the same axis as the central axis of the third quartz light-transmitting window 4-3. Other compositions and connection methods are the same as those in the second embodiment. The purpose of adding the afterglow collection device 8 is to eliminate the influence of the scattered light generated by the laser beam on the plasma spectrum.
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