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Thin film solar cell, component and manufacturing methods thereof

A thin-film solar cell, metal thin-film layer technology, applied in electrical components, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of difficult patterning, high resistance loss, and improve photoelectric conversion efficiency, component power and finished products. The effect of increasing rate and tolerance

Active Publication Date: 2013-03-20
盐城正泰新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The invention provides a thin-film solar cell, a component and a manufacturing method, which are used to solve defects such as high resistance loss and difficulty in patterning existing in the existing thin-film solar cell manufacturing technology, and to manufacture high-performance solar thin-film cells simply and efficiently

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  • Thin film solar cell, component and manufacturing methods thereof
  • Thin film solar cell, component and manufacturing methods thereof
  • Thin film solar cell, component and manufacturing methods thereof

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Embodiment Construction

[0041] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art will recognize the applicability of other processes and / or the use of other materials. Additionally, configurations described below in which a first feature is "on" a second feature may include embodiments where the first and second features are form...

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Abstract

The invention provides a thin film solar cell, a component and manufacturing methods thereof. The thin film solar cell comprises a substrate, a first transparent conductive oxide layer, at least one NIP junction and a second transparent conductive oxide layer, wherein the first transparent conductive oxide layer is formed on the substrate; the NIP junction is formed on the first transparent conductive oxide layer; and the second transparent conductive oxide layer is formed on the NIP junction. The thin film solar cell is characterized in that: an intrinsic semiconductor adhesive layer and a metal film layer are formed between the substrate and the first transparent conductive oxide layer; the intrinsic semiconductor adhesive layer is contacted with the substrate; and the metal film layer is contacted with the first transparent conductive oxide layer. The invention further provides a method for manufacturing the cell and a method for manufacturing a thin film solar cell component. According to the invention, the problems of high loss and difficulty in patterning in the manufacturing process of a cell component with an NIP structure in the prior art are solved.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to thin-film solar cells, components and manufacturing methods. Background technique [0002] Silicon-based thin film cells can be divided into PIN and NIP structures according to the growth sequence, but in order to obtain high conversion efficiency in applications, the P layer is usually used as a window layer through which sunlight enters the cell. Cells with a PIN structure are usually grown on a highly transparent ultra-white glass substrate, and can be patterned relatively easily by laser, so as to realize the series and parallel structures of cells to form components. However, the reflection of the glass interface in this structure causes about 8% of the incident light loss; on the other hand, during the growth process of the P / / I interface, it is difficult to control the contamination of the I layer by the dopant after the growth of the P layer. At present, th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0352H01L31/075H01L31/20
CPCY02E10/548Y02P70/50
Inventor 朱鑫牛新伟李贵君王明华郁操方晓玲程冰周曦丁建杨立友
Owner 盐城正泰新能源科技有限公司
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