Pi-network-based millimeter wave frequency band receiver with electrostatic discharge protection function

Abstract

The invention discloses a pi-network-based millimeter wave frequency band receiver with an electrostatic discharge protection function, and belongs to the field of radio frequency and millimeter wave integrated circuit designing. The receiver comprises an electrostatic discharge (ESD) protection circuit consisting of back biased diodes, a low-noise amplifier (LNA) in a two-stage amplification structure, mixers of branch circuits I and Q, gain variable amplifiers of the branch circuits I and Q, a balun and an output ESD protection circuit consisting of the back biased diodes. Connection relationships among the circuits are that: the ESD protection circuit is connected in series with the LNA; the other end of the ESD protection circuit is an input end; the other end of the LNA is connected with the common input end of the two mixers of the branch circuits I and Q; the input end of the balun is a local oscillation (LO) end, and the output end of the balun is connected with the two local oscillation signal input ends of the mixer of the branch circuit I; the output ends of the mixers of the branch circuits I and Q are connected with the input ends of the gain variable amplifiers of the two branch circuits respectively; and the output ends of the gain variable amplifiers are connected to the final output end of the circuit after passing through the ESD protection circuit. By the invention, the electrostatic reliability of the circuit of the receiver can be ensured, and the overall performance of broadband input matching, high gain and low noise of the receiver can be improved.

Description

technical field [0001] The invention belongs to the field of radio frequency and millimeter wave integrated circuit design, in particular to a high-reliability, high-performance receiver with electrostatic discharge (ESD) protection. Background technique [0002] With the development of CMOS (Complementary Metal-Oxide-Semiconductor: Complementary Metal-Oxide-Semiconductor) high-speed wireless communication circuits and systems, and the continuous improvement of user requirements for communication quality and speed experience, the rate of information exchange continues to increase, especially Indoor high-speed communication needs are becoming more and more important. According to Mason's prediction, by 2016, 80% of the global wireless communication data volume will be generated indoors. In this context, in order to break through the bottleneck of the lack of low-frequency spectrum resources, wireless communication has entered the era of radio frequency, microwave and millime...

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Problems solved by technology

Another way is to take into account the parasitic capacitance in the ESD protection circuit in the input impedance matching network, such as the reference "M.-D.Ker and B.-J.Kuo," Decreasing-size distributed ESD protection scheme for broadband RF circuits," IEEE Trans.Microw.Theory Tech., vol.53, No.2, pp.582-589, Feb.2006. "A distributed circuit architecture is used, but the transmission line network is even in the millimeter wave band It will also occupy a large chip area, and the practicability is not strong

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