60 results about "Millimeter wave integrated circuits" patented technology

A low-loss interface between a mm-wave integrated circuit and a waveguide comprises a surface having a contact location for said integrated circuit and a waveguide location for fixing a waveguide thereon; a transmission line extending along said surface from said contact location to the waveguide location and extending into the waveguide location as a waveguide feed; and a connection bump on a surface of the mm-wave integrated circuit. The mm-wave integrated circuit RFIC is connected to the surface at the contact location through the connection bump, such as to connect a signal output of the RFIC to the transmission line, thereby providing said low loss interface.

The present invention relates to an LCP substrate-based encapsulation shell and a preparation method. The encapsulation shell comprises a metal enclosure, a LCP substrate composite layer which is arranged below the metal enclosure, and a metal cover plate which covers the metal enclosure; a plurality of LCP substrates which are connected with one another and are laminated so as to form the LCP substrate composite layer; the metal enclosure is in airtight connection with the LCP substrate composite layer; the metal cover plate is in airtight connection with the metal enclosure; the LCP substrate composite layer includes a chip adhesive layer, a gold wire bonding layer, components and a metal enclosure welding layer which are connected with one another sequentially; through holes are formed in the metal enclosure welding layer, so that excellent grounding and space isolation are realized; and electroplated solid holes are formed in each layer of the LCP substrate composite layer, so that electrical connection between any layers can be realized. The shell of the invention has the advantages of high air tightness, small size and light weight, and can be applied to high-frequency integrated circuits such as microwave and millimeter wave integrated circuits.

The invention discloses a millimeter-wave frequency multiplier and cascaded frequency multipliers, belonging to the technical field of radio frequency/millimeter wave integrated circuits. The frequency multiplier provided by the invention comprises a pseudo-differential amplifier, an LC parallel resonator cavity and an LC series resonator cavity, wherein the LC parallel resonator cavity is connected between the output end of the pseudo-differential amplifier and a power supply VDD (Voltage Drain Drain), the LC series resonator cavity is connected between the output end of the pseudo-differential amplifier and a ground wire, both input ends of the pseudo-differential amplifier are respectively connected with the positive end and the positive end of an input baseband signal (f0); and the LCparallel resonator cavity has the resonation frequency of 2f0, and the LC series resonator cavity has the resonation frequency of 4f0. The cascaded frequency multipliers provided by the invention comprise a plurality of the frequency multipliers which are sequentially connected through a single-to-double passive transformer. The millimeter-wave frequency multiplier and the cascaded frequency multipliers, provided by the invention, have the advantages of low power consumption, pure frequency spectrum of a frequency-multiplication output signal, good harmonic suppression performance, strong output signal, high frequency and easiness for single-chip integration on a silica-based process.

The invention discloses a substrate integrated waveguide split ring resonator-based microwave band pass filter. The microwave band pass filter comprises a substrate integrated waveguide which is formed by fixing two rows of metal members on a dielectric substrate, wherein the two ends of the substrate integrated waveguide are connected with a micro-strip feed line respectively; the surfaces of both the micro-strip feed line and the substrate integrated waveguide are made of metal dielectric; the upper surface of the substrate integrated waveguide is positioned between the two rows of metal members to corrode an m*n split ring resonator array; and a row of dumbbell-shaped area bodies or dumbbell-shaped deformation areas are corroded corresponding to each line of split ring resonators on the lower surface of the substrate integrated waveguide between the two rows of metal members. The band pass filter has the advantages of out-of-band steep attenuation, small volume, light weight and high power capacity and is easy to be integrated with other planar microwave and millimeter-wave circuits, so that the band pass filter is expected to be applied to the microwave and millimeter-wave integrated circuit or a millimeter wave integrated circuit.

The invention relates to a microstrip bandpass filter with a sector open-circuit structure, belonging to the technical field of microwave/millimeter wave devices and relating to a microwave/millimeter wave integrated circuit. Based on a traditional parallel coupling microstrip line filter, the microstrip bandpass filter with the sector open-circuit structure adds two sections of sector open-circuit shunts; either sector open-circuited shunt is a one-fourth wavelength terminal open-circuit line with a sector-structure end terminal; and the start terminals of the two sections of sector open-circuit shunts are perpendicularly connected with a center point of an auxiliary microstrip line. The invention has the advantages of simple form, compact structure and high beyond-strip attenuation, not only can be used in a microwave/millimeter wave integrated circuit, but also can be used in a submillimeter wave band with higher frequency. Meanwhile, an input microstrip line and an output microstrip line of the microstrip bandpass filter with the sector open-circuit structure are on the same straight line, thereby facilitating the application in practical projects.

The invention relates to a folding self-die substrate integrated waveguide which can be applied to the design of microwave millimeter wave circuits or the design of microwave millimeter wave integrated circuits. A filter is in a multi-layered structure and respectively comprises a front metal patch (3), an upper medium substrate (1), a middle metal layer (4), a lower medium substrate (2) and a bottom metal layer (5) from top to bottom, wherein an input end (8) and an output end (9) are respectively arranged at both ends of a self-die substrate integrated waveguide; a row of first metalized through holes (7) is arranged at one side of the upper medium substrate (1) and the lower medium substrate (2) of the self-die substrate integrated waveguide to form the side wall of the waveguide and is connected with the front metal patch (3), the middle metal layer (4) and the bottom metal layer (5); another row of second metalized through holes (6) is arranged at the other side of the lower medium substrate (2) and is connected with the middle metal layer (4) and the bottom metal layer (5) to form the H-surface metal wall of the waveguide; and the filter is provided with groove gaps (10) on the front metal patch (3) or the middle metal layer (4).

A transceiver that includes a radio frequency source comprised of a monolithic millimeter wave integrated circuit. The transceiver generates a signal of a first frequency, which is then converted to a signal of a second frequency as the signal is conveyed through the transceiver. The value of the second frequency exceeds that of the first frequency.

A wireless communication module includes a plurality of monolithic millimeter-wave integrated circuits (MMICs) for signal processing attached to the top surface of a multi-layer low temperature co-fired ceramic substrate; a planar transmission line formed on the top surface of the multi-layer substrate for communications between the MMICs; a metal base attached to the bottom surface of the multi-layer substrate and having an opening to which an antenna is attached; a plurality of vias for connecting the metal base and the planar transmission line within the multi-layer substrate to establish a uniform potential on a ground plane of the multi-layer substrate; an embedded waveguide formed in the opening surrounded with the vias within the multi-layer substrate; and a planar transmission line-to-waveguide transition apparatus for the transition of waves between the planar transmission line and the embedded waveguide.

MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

Testing devices such as integrated circuits (IC) with integrated antennas configured for millimeter wave (mmW) transmission and/or reception. A DUT may be mounted to an interface in a measurement fixture (e.g., a socket, anechoic chamber, etc.). Power and data connections of the DUT may be tested over the interface, which may also provide connections (e.g., wired) for input/output signals, power, and control and may also provide positioning. Radio frequency (RF) characteristics of the DUT may be tested over-the-air using an array of antennas or probes in the radiating Fresnel zone of the DUT's antennas. Each of the antennas or probes of the array may incorporate a power detector (e.g., a diode) so that the RF radiating pattern may be measured using DC voltage measurements. Measured voltage measurements may be compared to an ideal signature, e.g., voltage measurements expected from an ideal or model DUT.

The invention relates to a receiver front-end circuit based on an integrated inductor noise cancelling technology, and belongs to the field of radio frequency and millimeter wave integrated circuits. The receiver front-end circuit comprises two same branch circuits which comprise low noise amplifiers, I-channel frequency mixers, Q-channel frequency mixers, and trans-impedance amplifiers; an input signal is divided into two channels and the two channels are connected with the input ends of the low noise amplifiers of the two branch circuits respectively; the output ends of the low noise amplifiers of the branch circuits are connected with the public input ends of the I-channel and Q-channel frequency mixers in the branch circuits; the local oscillator ends of the I-channel frequency mixers in the two branch circuits are respectively connected with the local oscillator input ends of the whole circuit; the local oscillator ends of the Q-channel frequency mixers of the two branch circuits are respectively connected with the Q-channel local oscillator input ends of the whole circuit; the differential output end of the I-channel frequency mixer in one branch circuit is connected with the differential output end of the Q-channel frequency mixer in the other branch circuit, and is connected with the differential input end of the trans-impedance amplifier in the other branch circuit. Through the application of the receiver front-end circuit, the thermal noise generated by an integrated inductor can be eliminated greatly.

The invention discloses an equivalent circuit model for a current reflux path in a single-ended inductor and a modeling method thereof, and belongs to the field of radio-frequency and millimeter wave integrated circuit design. The equivalent circuit model has a 1-n circuit structure. The method comprises the following steps of: obtaining a correction model of a single-ended inductor direct current inductance value; establishing an equivalent impedance matrix model of a reflux path describing skin effect and proximity effect under high frequency, and calculating an equivalent impedance model of an inductance current reflux path; establishing the equivalent circuit model based on the 1-n circuit structure; and performing curve fitting on the equivalent circuit model to obtain parameters of various components in the equivalent circuit model. By the method, the influence of the circuit reflux path under the high frequency on the inductance value in an actual circuit can be precisely described so as to accurately reflect the influence of inductance position placement in the layout and peripheral routing effect on circuit performance in the simulation phase, and circuit designers are assisted in designing high frequency circuits precisely and effectively.

Apparatus and method example embodiments provide an improved common mode rejection ratio in high frequency transformer baluns. According to an example embodiment of the invention, an apparatus comprises a first winding of at least one turn forming a primary coil, having first and second differential leads oriented in a first direction, the primary coil formed in a first conductive layer over a substrate and the first differential lead of the primary coil being grounded; and a second winding of at least one turn forming a secondary coil, having a third and fourth differential leads oriented in a second direction offset by an angle of greater than zero degrees and less than 180 degrees from the first direction, the secondary coil formed in a second conductive layer separated by an insulating layer from the first conductive layer.

The invention belongs to the technical field of millimeter wave integrated circuits, and particularly relates to a rotary traveling wave voltage controlled oscillator with high power and large tuning ranges. The rotary traveling wave voltage controlled oscillator is mainly composed of a rotary traveling wave oscillator, a negative resistance network, a voltage controlled variable capacitor and a voltage controlled phase shift network. According to the rotary traveling wave voltage controlled oscillator, parasitic effects to the oscillator can be reduced. Simultaneously, the tuning range of the output frequency of the voltage controlled oscillator is increased by coupling the voltage controlled variable capacitor in the oscillator; and waves with different phases are identical in phases after passing through the voltage controlled phase shift network by coupling the voltage controlled phase shift network in the oscillator, so that the waves with the identical phases are stacked together to achieve high power output.

Provided is an artificial magnetic conductor shaped like a Chinese character 'jing' and used for a 60GHz on-chip antenna. The artificial magnetic conductor can be used on a millimeter wave integrated circuit, waveguide transmission, the on-chip antenna and the like. The artificial magnetic conductor is manufactured through a CMOS integrated circuit process, and is composed of a silicon substrate, a silicon oxide buffering layer, a metal layer, a silicon oxide insulation layer and an upper functional circuit layer, and the metal layer is manufactured to be of a distributed-type structure shaped like the Chinese character 'jing'. The artificial magnetic conductor is applied to the design of the millimeter wave integrated circuit and particularly the integrated on-chip antenna, effective isolation of the antenna and the silicon substrate is achieved, and incident electromagnetic waves of the antenna are prevented from entering the silicon substrate. The artificial magnetic conductor shaped like the Chinese character 'jing' and used for the 60GHz on-chip antenna serves as an isolation layer between the millimeter wave on-chip radiating antenna and the silicon substrate, the structure is simple, the CMOS process is compatible, the artificial magnetic conductor is applied to the 60GHz on-chip antenna, and loss of signals of the incident electromagnetic waves of the antenna by the silicon substrate can be reduced.

Aiming at defects of an existing millimeter-wave circuit connection technology, the invention discloses a passive circuit suitable for a microwave and millimeter-wave integrated system. The passive circuit comprises a microwave circuit board, a microwave device and a microwave lead, wherein the working frequency of the microwave device is 30-60GHz, the impedance of the microwave lead is 40-60ohm, the loss of every millimeter unit of height of the microwave lead is smaller than 0.1dB, and the signal isolation degree is greater than 80dB. The microwave lead is a conductor for transmitting microwave and millimeter-wave signals. The microwave lead comprises vertical interconnected structure lines and a Y-type power divider. The passive circuit has the following beneficial effects: the passive circuit disclosed by the invention, based on a three-dimensional microwave and millimeter wave integrated circuit design, comprises a vertical coaxial structure and a micro coaxial power divider. The passive circuit disclosed by the invention has a good signal interconnection effect and a good signal isolation effect, the full-band signal interconnection insertion loss is smaller than 0.1dB/mm, the inter-chip signal isolation degree is greater than -65dB, and the electromagnetic energy leakage during signal transmission is smaller than -86dB.

The invention discloses a ground coupling type hybrid coupler and a millimeter wave ultra-wideband single-pole single-throw switch, relates to millimeter wave switches, and belongs to the technical field of basic electric elements. The hybrid coupler comprises an upper metal layer and a lower metal layer, wherein the upper metal layer is in a micro-strip line form in the horizontal direction, andthe lower metal layer is a ground coupling type defect horizon, so that the electromagnetic field distribution around the micro-strip line is changed under compact size, the effective inductance of the coupler is strengthened and effective capacitance is imported, thereby realizing a series resonance condition. The single-pole single-throw switch comprises the ground coupling type hybrid coupler,a first control transistor, a second control transistor, a first biasing resistor and a second biasing resistor. The hybrid coupler is capable of effectively compensating the stray capacitance of thecontrol transistors so as to realize low insertion loss, high isolation degree and high power processing ability in an ultra-wideband working frequency range, is simple and compact in structure and small in circuit area, and has excellent scientific application value in the design of millimeter wave integrated circuits.

The invention belongs to the technical field of millimeter wave integrated circuits, and particularly relates to a rotary traveling wave oscillator of multiple energy injection locking. The circuit mainly comprises a rotary traveling wave oscillator, a negative resistance network, a voltage controlled variable capacitor, a voltage controlled phase shifter and a harmonic generation circuit. Parasitic resistances in a capacitance device and an inductance device are high with the rising of the signal frequency, particularly when the frequency in ranges of millimeter waves or sub-millimeter waves in the integrated circuit, and simple capacitance inductance oscillator is difficult to achieve the output of wide tuning ranges and large power. According to the rotary traveling wave oscillator, a voltage-controlled rotary traveling wave oscillator is used to produce fundamental frequency signals to couple the harmonic generation circuit at different positions of the oscillator. The produced high sub-harmonic signals are injected into another oscillator to achieve oscillation with high frequency. The injection locking range is increased by injecting a plurality of energy and choosing appropriate phase of the injected signal.

The invention discloses a millimeter-wave frequency band amplifier based on transmission line coupling effect voltage feedback neutralization, and belongs to the field of radio frequency and millimeter wave integrated circuit designs. The millimeter-wave frequency band amplifier comprises an N-channel metal oxide semiconductor (NMOS) transistor, a coupled line, a feedback capacitor, a blocking capacitor and a bias resistor, wherein the coupled line consists of two transmission lines having the same lengths; a source end of the NMOS transistor is grounded; a drain end of the NMOS transistor is connected with an L1 end of one transmission line in the coupled line and connected to an output end of a circuit, and an L2 end of the transmission line is connected with a power supply; one end, which is positioned on the same side as the L2, of the other transmission line in the coupled line is connected with the power supply; one end, which is positioned on the same side as the L1, of the other transmission line in the coupled line is connected with one end of the feedback capacitor; the other end of the feedback capacitor is connected with a grid end of the NMOS transistor, and connected with one end of the blocking capacitor and one end of the bias resistor at the same time; the other end of the blocking capacitor is connected with an input end of the circuit; and the other end of the bias resistor is connected with a bias voltage. Through adoption of the amplifier, the gain can be increased; the stability is improved; the noise and power consumption are lowered; the chip area is reduced; and the cost is saved.

The invention discloses a three-dimensional millimeter wave array transmitting and receiving system. The system mainly is used for solving the problem that the conventional millimeter wave integrated circuit is low in system stability and applicability. The three-dimensional millimeter wave array transmitting and receiving system comprises a three-dimensional millimeter wave front end array and a support system; the three-dimensional millimeter wave front end array comprises an upward radiating surface and four lateral radiating surfaces; each radiating surface is composed of a two-dimensional millimeter wave front end array; the two-dimensional millimeter wave front end array is composed of a plurality of one-dimensional linear arrays; the one-dimensional linear arrays are composed of a plurality of system transmitting and receiving units; the system transmitting and receiving units comprise transmitter integrated circuit modules, receiver integrated circuit modules and endfire on-chip antennas; and each system transmitting and receiving unit is connected through a power dividing network. The system provided by the invention is simple in structure, rational in design and reliable in performance.

The invention discloses a novel programmable millimeter wave digital power amplifier. The power amplifier comprises NMOS amplifier tubes M0 and M1, NMOS switch tubes M2, M3, M4, M5, a bias resistor R1, a bias resistor R2, blocking capacitors C1 and C2, neutralizing capacitors C3 and C4, a common-mode rejection inductor L1, and a differential to single-end transformer TF1. A millimeter wave radio frequency differential signal is input through the blocking capacitors C1 and C2, and amplified and output through the amplifier tubes M2, M3, M4 and M5; the on/off of the switch tubes M0 and M1 is controlled through the digital control signal D0 and the digital control signal D1, and then the on/off of the amplifier tube is controlled, thereby controlling the output power of the amplifier, and thedefect that the output power of the traditional millimeter wave power amplifier is non-adjustable. The power amplifier disclosed by the invention is simple in structure, high in integration degree, and can be used for the millimeter wave power amplifier and other millimeter wave integrated circuit system design; the output power digital programming is realized, and the power back-off efficiency of the power amplifier and the system is improved.

The invention discloses a three-dimensional structure TM010-lambda/4 millimeter wave resonator based on the silicon technology. Two output ends a, b of two active circuits are connected with two open ends of the corresponding lambda/4 resonator at the juncture between a silicon substrate layer and an encapsulated layer; two short circuit ends of the lambda/4 resonator is connected with a cylindrical waveguide resonator on a first electrical conduction metal plate and realizes the energy coupling by a groove joint on the first electrical conduction metal plate; a rectangular waveguide is assembled between the first electrical conduction metal plate and a second electrical conduction metal plate; a rectangular wall of the rectangular waveguide is intersected with the outer wall of the cylindrical waveguide; the intersecting common part is removed so as to realize the energy coupling of the rectangular waveguide and the cylindrical waveguide. The resonator is suitable for being realized on the encapsulated layer based on the silicon technology; the coupling between a passive circuit, a power source and a signal wire on the silicon chip is small; the dissipation influence of the silicon chip is small; and simultaneously the TM010-lambda/4 millimeter wave resonator obtains the power output which is higher by one order of magnitude than that the traditional lambda/4 resonator; therefore the TM010-lambda/4 millimeter wave resonator has the using value in a millimeter wave integrated circuit based on the silicon technology.

The invention discloses a nitrogen polar surface gallium nitride high-electron-mobility transistor and a manufacturing method thereof which mainly solve the problems that an existing nitrogen polar surface gallium nitride device is low in material epitaxial quality and can generate a heat accumulation effect and current collapse during high-voltage and high-power work. The nitrogen polar surface gallium nitride high-electron-mobility transistor comprises a diamond substrate (1), a barrier layer (4), an insertion layer (5) and a channel layer (6) from bottom to top, wherein a bonding layer (2) and a supporting layer (3) are arranged between the substrate (1) and the barrier layer (4), an insulated gate dielectric layer (7) is arranged at the upper portion of the channel layer (6), and a gate electrode is arranged on the insulated gate dielectric layer (7); ohmic contact areas are arranged at the two sides of the channel layer (6), and a source electrode and a drain electrode are arranged on the ohmic contact areas respectively. The nitrogen polar surface gallium nitride high-electron-mobility transistor is high in working frequency, the self-heating effect of a device is greatly improved, the output power working reliability of the device is improved; the manufacturing process is simple, the consistency is high, and the nitrogen polar surface gallium nitride high-electron-mobility transistor can be used for a high-frequency microwave power amplifier and a monolithic microwave millimeter wave integrated circuit.