Equivalent circuit model for current reflux path in single-ended inductor and modeling method thereof

Abstract

The invention discloses an equivalent circuit model for a current reflux path in a single-ended inductor and a modeling method thereof, and belongs to the field of radio-frequency and millimeter wave integrated circuit design. The equivalent circuit model has a 1-n circuit structure. The method comprises the following steps of: obtaining a correction model of a single-ended inductor direct current inductance value; establishing an equivalent impedance matrix model of a reflux path describing skin effect and proximity effect under high frequency, and calculating an equivalent impedance model of an inductance current reflux path; establishing the equivalent circuit model based on the 1-n circuit structure; and performing curve fitting on the equivalent circuit model to obtain parameters of various components in the equivalent circuit model. By the method, the influence of the circuit reflux path under the high frequency on the inductance value in an actual circuit can be precisely described so as to accurately reflect the influence of inductance position placement in the layout and peripheral routing effect on circuit performance in the simulation phase, and circuit designers are assisted in designing high frequency circuits precisely and effectively.

Description

technical field [0001] The invention belongs to the field of radio frequency and millimeter wave integrated circuit design, in particular to an equivalent circuit model and a modeling method of a single-end inductive current return path in an on-chip passive device. Background technique [0002] In CMOS radio frequency and millimeter wave integrated circuits, components such as planar spiral inductors, transmission lines, MIM capacitors, and resistors are the most commonly used passive devices. In the modeling and simulation of these, the modeling of the two inductive elements of the planar spiral inductor and the transmission line is the most complicated, especially with the development of CMOS high-speed wireless communication circuits and systems, the operating frequency of the circuit continues to rise. Reaching the V-band, W-band and D-band of millimeter wave and submillimeter wave makes the modeling of the two inductive components more challenging. Compared with these...

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Problems solved by technology

[0006] For the above-mentioned key problems in inductor design, the traditional inductor model has not been considered, such as the reference "W.Gao and Z.Yu," Scalable Compact Circuit Model and Synthesis for RF CMOS SpiralInductors," IEEE Trans.Microw .Theory Tech., vol.54, no.3, pp.1055-1064, Mar.2006. and "C.Wang, H.L.Liao, C.Li, R.Huang, W.S.Wong, X.Zhang, and Y.Y. Wang, "A Wideband Predictive Double-π Equivalent-Circuit Model for On-Chip Spiral Inductors," IEEE Trans.Electron Devices, vol.56, no.4, pp.609-619, Apr.2009. The modeling of the inductor itself, and the reference "V

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