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Solid-state imaging device and imaging device

A technology of solid-state imaging device and imaging device, applied in the field of solid-state imaging device and imaging device

Active Publication Date: 2015-11-25
FUJIFILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, dynamic range expansion is not pointed out in JP-A-2007-103786

Method used

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  • Solid-state imaging device and imaging device
  • Solid-state imaging device and imaging device

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Embodiment Construction

[0033] The solid-state imaging device 100 in one embodiment of the present invention will be described below with reference to the drawings. The solid-state imaging device 100 is used in a state where the solid-state imaging device is installed in, for example, an imaging device such as a digital still camera or a digital video camera, or in an imaging module installed in an electronic endoscope, a mobile phone with a camera, etc. or similar device.

[0034] figure 1 The solid-state imaging device 100 shown in includes a substrate 101, an insulating layer 102, a connection electrode 103, a pixel electrode 104, a connection portion 105, a connection portion 106, an organic layer 107, an opposing electrode 108, a buffer layer 109, a sealing layer 110, a color filter 111 , a partition wall 112 , a light shielding layer 113 , a protective layer 114 , an opposing electrode voltage supply portion 115 , and a readout circuit 116 .

[0035] The substrate 101 is a semiconductor subst...

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Abstract

A solid-state imaging device includes a photoelectric conversion layer (107), a MOS transistor circuit. The photoelectric conversion layer (107) is formed over a semiconductor substrate (101). The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer (107) and then collected, and that is formed in the semiconductor substrate (101), the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion (104,FD), a reset transistor (204), and an output transistor (205). The charge accumulation portion (104,FD) is electrically connected with the photoelectric conversion layer (107). The reset transistor (204) resets a potential of the charge accumulation portion (104,FD) to a reset potential (Vs). The output transistor (205) outputs a signal corresponding to the potential of the charge accumulation portion (104,FD). The reset transistor (204) and the output transistor (205) have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND < Vs < GND + ”V2 + (Vdd / 5) (1).

Description

technical field [0001] The present invention relates to a solid-state imaging device and an imaging apparatus. Background technique [0002] JP-A-2007-103786 discloses a solid-state imaging device in which "B" (blue) and "R" (red) light is detected by a photodiode inside a silicon substrate, and "G" (green) light is detected by a silicon On-substrate photoelectric converter detection. [0003] In the solid-state imaging device, for a photoelectric converter on a silicon substrate, holes among charges generated in a photoelectric conversion layer are accumulated in a pixel electrode, and a signal corresponding to the accumulated hole is read by a signal readout circuit, so The signal readout circuit is formed of n-channel MOS transistors. In a solid-state imaging device, for a photodiode inside a silicon substrate, electrons among charges generated here are accumulated, and a signal corresponding to the electrons is read by a signal readout circuit composed of an n-channel ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/335H04N5/374H04N5/3745H04N5/378H01L27/146H04N25/00
CPCH04N5/335H01L27/14609H01L27/14647H01L27/14667H04N5/355H04N5/3698H04N5/374H04N25/57H04N25/709H04N25/76H01L27/148H04N25/00
Inventor 后藤崇
Owner FUJIFILM CORP
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