Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

An Isotropic Double Negative Artificial Material

An artificial material and isotropic technology, applied in waveguide devices, electrical components, circuits, etc., can solve problems that are not suitable for working in a vacuum environment

Inactive Publication Date: 2011-12-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the double-negative artificial materials prepared are mainly one-dimensional and two-dimensional, and very few are three-dimensional double-negative artificial materials. The selected dielectric substrates such as FR-4 dielectric substrates are not suitable for working in a vacuum environment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An Isotropic Double Negative Artificial Material
  • An Isotropic Double Negative Artificial Material
  • An Isotropic Double Negative Artificial Material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] 1. Structural isotropic double negative artificial material (processing technology):

[0022] A structure composed of a metal open ring resonator (SRR) and a metal thin wire (Rod) (such as figure 2 ) to construct a unit structure with three-dimensional symmetry (such as image 3 ). Will image 3 The unit structure in is arranged according to a certain periodic combination (such as Figure 4 ), thus forming figure 1 The isotropic double-negative artificial material shown in the lower center region. The specific structural dimensions are as follows (unit: mm): t=0.14, w=2.2, g=0.3, e=0.15, h=0.2. At the same time, the metal thin wire is 2.5mm long, the material of the metal open loop resonator and the metal thin wire is copper sheet, and its thickness is 0.017mm; the length and width of the ceramic bottom plate are both 5mm, and the thickness is 0.25mm. r =5.6, loss tangent tanδ=0.0041; Figure 4 The unit period length in is 5mm.

[0023] because image 3 The un...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An isotropic double-negative artificial material belongs to the technical field of functional materials. The invention is formed by densely stacking the double-negative artificial material units of the three-dimensional structure periodically; the double-negative artificial material unit of the three-dimensional structure comprises a medium material cube and double-negative structural units located on three adjacent faces of the medium material cube; the double-negative artificial material unit The structural unit includes a dielectric substrate, a metal open-circuit ring resonator and a thin metal wire; the metal open-circuit ring resonator is located on the front of the dielectric substrate, and consists of two open-circuit rings with different sizes and opposite openings, in which the small open-circuit ring is nested in the large open-circuit ring; The thin metal wires are located on the back of the dielectric substrate, parallel to the opening center line of the two split rings and the distance is equal to the thickness of the dielectric substrate; in the double-negative artificial material unit of the three-dimensional structure, the metal thin wires of the three double-negative structural units are perpendicular to each other. The double-negative artificial material provided by the invention has the characteristics of three-dimensional structure and isotropy, and can be applied to high-power microwave and millimeter wave sources for exciting microwave and millimeter waves.

Description

technical field [0001] The invention belongs to the technical field of functional materials and relates to artificial structural materials, in particular to an isotropic double-negative artificial material. Background technique [0002] Double-negative artificial materials (Double-Negative Metamaterials) refer to a dielectric material whose dielectric constant and magnetic permeability are negative at the same time. When electromagnetic waves propagate, the relationship between wave vector k, electric field E and magnetic field H conforms to the left-hand law, so double-negative artificial materials are also called "left-hand materials". Double negative artificial materials have some unusual electromagnetic properties, such as negative refractive index, reverse Cerenkov radiation, reverse Doppler effect, catadioptric law, etc. The realization of double-negative artificial materials was rated as one of the top ten scientific and technological breakthroughs in 2003 by the US ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01Q15/00H01P7/00
Inventor 段兆云郭晨唐涛
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products