solid state imaging device

Abstract

Pixel units (10) arranged in an array are each provided with: a photodiode (11), a transfer transistor (13) which transfers a charge to a floating diffusion layer (12), and an amplifier transistor (14) which outputs the transferred charge to an output line. An insulating isolation section (22) separates adjacent photodiodes (11) from each other and separates the photodiode (11) and the amplifier transistor (14). The insulating isolation section (22) comprises a first area (A) where the amplifier transistor (14) is not arranged between the photodiodes (11), and a second area (B) where the amplifier transistor (14) is arranged in between. Below the insulating isolation section (22), a first isolation diffusion layer (23) and second isolation diffusion layer (24) are formed, and at the first area (A), the width of the second isolation diffusion layer (24) is wider than the width of the first isolation diffusion layer (23).

Description

technical field [0001] The present invention relates to a solid-state imaging device in which pixel units including photoelectric conversion units are arranged in an array. Background technique [0002] In recent years, MOS-type solid-state imaging devices have attracted attention as devices capable of driving with low power consumption and high-speed imaging, and have begun to be installed in a wide range of fields such as portable cameras, vehicle-mounted cameras, and surveillance cameras. [0003] Figure 6 It is a circuit diagram showing the configuration of a general MOS type solid-state imaging device. Such as Figure 6 As shown, pixel units 100 including photoelectric conversion units (photodiodes) 101 are arranged in an array to form an imaging region 200 . Charges photoelectrically converted in the photoelectric conversion unit 101 are transferred to a floating diffusion layer (floating diffusion) 102 through a transfer transistor 103 . The charge transferred to t...

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Problems solved by technology

Therefore, if the long-wavelength light (red light) incident on the substrate 201 from an oblique direction enters the laterally expanded region at the bottom of the photoelectric conversion portion 101, part of the photoelectrically converted charges leaks and diffuses to adjacent pixels. Section 100, color mixing or scatter may occur

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