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Method and device for predicting semiconductor reliability and semiconductor testing system

A semiconductor, reliability technology, applied in the field of analog systems, can solve problems such as aging bias dependence

Active Publication Date: 2011-12-21
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this type of systematic error simulates the bias-voltage dependence of the aging of the circuit arrangement

Method used

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  • Method and device for predicting semiconductor reliability and semiconductor testing system
  • Method and device for predicting semiconductor reliability and semiconductor testing system
  • Method and device for predicting semiconductor reliability and semiconductor testing system

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Embodiment Construction

[0024] Aspects of the present disclosure can be better understood with the following detailed description and corresponding illustrations. It is emphasized that, in accordance with the standard industry practice, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

[0025] It should be appreciated that the following disclosure provides many different embodiments or examples for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the disclosure. These examples are of course only illustrations and should not be limiting.

[0026] Circuit devices, such as field effect transistors (FETs), NMOS or PMOS transistors, and the like, degrade over time. As an example of degradation, a device may increase leakage and / or decrease mobility with use. In order to determine the service life of the designed d...

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Abstract

The present disclosure provides systems and methods for predicting semiconductor reliability, as well as semiconductor test systems. In an embodiment, a method for predicting the semiconductor reliability includes receiving a degradation parameter input of a semiconductor device and using a degradation equation to determine a plurality of bias dependent slope values for degradation over a short time period according to the degradation parameter input. The plurality of slope values include at least two different slope values for degradation over time. The system accumulates the plurality of slope values and projects the accumulated slope values over a long time period to determine a stress effect for the semiconductor device. The predicting results of the present invention are more accurate than those of the prior art.

Description

technical field [0001] The present disclosure relates to a simulation system, in particular to a method and device for predicting semiconductor reliability and a semiconductor testing system. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in integrated circuit materials and design have resulted in different generations of integrated circuits, with each generation having smaller and more complex circuits than the previous generation. Nonetheless, these advances have increased the complexity of integrated circuit processing and fabrication and similar developments in integrated circuit processing and fabrication have been required for these advances to be realized. During the evolution of integrated circuits, functional density (the number of interconnected devices per unit wafer area) generally increases as geometry size (the smallest element or line that can be fabricated by a process) de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F2217/82G06F17/5036G06F30/367G06F2119/10G01R31/2642G01R31/2648G06F2119/04
Inventor 罗嘉琳苏哿暐郑敏祺萧凤玲萧铮黄怡硕陈怡君
Owner TAIWAN SEMICON MFG CO LTD