Light-emitting diode with current blocking layer and manufacturing method thereof

Abstract

The invention provides a light-emitting diode with a current blocking layer, comprising an n-type semiconductor epitaxial layer, a multiple quantum well, and a p-type semiconductor epitaxial layer arranged in sequence from bottom to top, and the p-type semiconductor epitaxial layer is further provided with A silicon-doped n-type semiconductor epitaxial thin layer, a current blocking layer is arranged in the light-emitting region defined on the silicon-doped n-type semiconductor epitaxial thin layer, and the silicon-doped n-type semiconductor epitaxial thin layer and The current blocking layer is provided with a transparent conductive layer, the transparent conductive layer is provided with a p-electrode, the p-electrode is arranged above the range of the current blocking layer, and the n-type semiconductor epitaxial layer is provided with an n-electrode ; According to the above light-emitting diodes, the present invention provides its manufacturing method. The light-emitting diode provided with the current blocking layer of the present invention has the advantages of ideal compactness and hardness of the current blocking layer, simple manufacturing process and low cost.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a light emitting diode, in particular to a light emitting diode provided with a current blocking layer and a manufacturing method thereof. Background technique [0002] As a new type of lighting element, light-emitting diodes have been widely used because of their advantages of high brightness and light efficiency. The chip structure of a traditional light-emitting diode generally includes a substrate layer, a buffer layer, an n-type semiconductor epitaxial layer, a multiple quantum well, a p-type semiconductor epitaxial layer, and a transparent conductive layer from bottom to top. There are metal n-electrode and p-electrode, and the p-electrode is set on the light-emitting area and occupies a certain area. In the arrangement of the p-electrode and the transparent conductive layer, most of the current will gather directly below the electrode, which cannot be well Lateral transporta...

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Problems solved by technology

However, the oxide insulating layer deposited by this method is generally not very ideal in terms of density and hardness.

In addition, there is another method for making a current blocking layer, which is to form a current blocking layer directly below the electrode in the p-type semiconductor epitaxial layer by ion implantation or diffusion. The thickness and structure of the current blocking layer formed by this method are difficult. Precise control leads to the expansion of current under the electrode, which cannot completely block the transport of current under the electrode, and the ion implantation and diffusion process is complicated and the cost is high

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