Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of polycrystalline silicic acid method texturing process

A silicic acid and process technology, which is applied in the field of polycrystalline silicic acid texturing process, can solve problems such as high reflectivity, increased reflection times, and slow production speed

Inactive Publication Date: 2011-12-28
JIANGYIN XINHUI SOLAR ENERGY
View PDF2 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to improve the photoelectric conversion efficiency of solar cells, it is necessary to chemically treat the silicon wafer during production, so that the surface of the silicon is made into a suede surface with a certain shape. Due to the existence of the suede surface, the reflectivity of the surface of the object will be greatly reduced. , so as to increase the absorption of light. The texturing of polycrystalline silicon wafers is isotropic etching on the surface of silicon wafers through chemical reactions to form dense pit-like surface structures, which increases the number of reflections of light on the surface of silicon wafers and minimizes the The reflectivity of light increases the wide absorption, increases the short-circuit current (Isc), and then improves the photoelectric conversion efficiency. Therefore, in the process of texturing, the proportion of the chemical solution has different effects on the weight loss control, the reflectivity, and the formation of black lines. However, the weight loss of the existing process is relatively low, the production speed of the equipment is relatively slow, the production capacity is relatively low, and the reflectivity is relatively high, and the black line is serious

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0013] All features disclosed in this specification, or steps in all methods or processes disclosed, may be combined in any manner, except for mutually exclusive features and / or steps.

[0014] Any feature disclosed in this specification (including any appended claims, abstract), unless otherwise stated, may be replaced by alternative features that are equivalent or serve a similar purpose. That is, unless expressly stated otherwise, each feature is one example only of a series of equivalent or similar features.

[0015] The polycrystalline silicic acid method texturing process of the present invention, the steps are as follows:

[0016] (1) The step of making texture with acid solution;

[0017] (2) The step of removing acid;

[0018] (3) The step of removing the oxide layer and metal ions;

[0019] (4) Steps of washing and drying.

[0020] In the texturing process of the step (1), the acid solution used includes HNO3 and HF at a ratio of 4:1, and the required texturing t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a polycrystalline silicon acid texturing process, which comprises the following steps of: texturing with acid liquor, removing the acid liquor, removing an oxide layer and metal ions, cleaning and drying. By the process, the weight reduction of a silicon chip is unchangeable, the reflectivity is improved, the black line of the surface is controlled, and the capacity of equipment is improved.

Description

technical field [0001] The invention relates to the field of making solar cells, in particular to a polycrystalline silicic acid texturing process. Background technique [0002] In recent years, polycrystalline silicon solar cells have been more and more widely used due to their high conversion efficiency, stable performance and moderate cost, and their output has surpassed that of monocrystalline silicon, occupying a dominant position in the market. [0003] In order to improve the photoelectric conversion efficiency of solar cells, it is necessary to chemically treat the silicon wafer during production, so that the surface of the silicon is made into a suede surface with a certain shape. Due to the existence of the suede surface, the reflectivity of the surface of the object will be greatly reduced. , so as to increase the absorption of light. The texturing of polycrystalline silicon wafers is isotropic etching on the surface of silicon wafers through chemical reactions to...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C23F1/24
Inventor 王世贤邱军辉吴红良
Owner JIANGYIN XINHUI SOLAR ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products