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Methods of arc detection and suppression during RF sputtering of a thin film on a substrate

An arc and substrate technology, applied in the direction of circuits, discharge tubes, electrical components, etc., can solve the problem of non-indicative monitoring of DC

Inactive Publication Date: 2012-01-11
PRIMESTAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Likewise, since the plasma is maintained even after the arc has formed, monitoring the DC bias is not indicative of an arc

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  • Methods of arc detection and suppression during RF sputtering of a thin film on a substrate
  • Methods of arc detection and suppression during RF sputtering of a thin film on a substrate
  • Methods of arc detection and suppression during RF sputtering of a thin film on a substrate

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Embodiment Construction

[0022] Reference will now be made in detail to embodiments of the invention, one or more examples of which are illustrated in the drawings. Each example is provided by way of explanation of the invention, not limitation of the invention. In fact, those skilled in the art will recognize that various modifications and variations can be made in the present invention without departing from the scope or spirit of the invention. For example, features illustrated or described as part of one embodiment can be used with another embodiment to yield still further embodiments. Thus, it is intended that the present invention includes such modifications and variations as come within the scope of the appended claims and their equivalents.

[0023] In this disclosure, when a layer is described as being "on" or "over" another layer or substrate, it is understood that the layers can be directly contacting each other or have another layer or feature interposed. Thus, this description only desc...

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Abstract

Methods and systems of arc suppression during RF sputtering of a thin film from a semiconducting target onto a substrate are provided. During sputtering, an alternating current of RF frequency can be applied to a semiconducting target to form a plasma. Upon formation of an arc extending from the target, an arc signature can be detected, where the arc signature is simultaneously defined by decreasing plasma voltage from an initial sputtering plasma voltage to an arc plasma voltage and increasing reflective power from an initial sputtering reflective power to an arc reflective power. Upon identification of the arc signature, the alternating current can be temporarily interrupted to the semiconducting target to suppress the arc extending from the target. Thereafter, the alternating current from the electrical power supply can be reapplied to the semiconducting target.

Description

technical field [0001] The subject matter disclosed herein generally relates to methods of sputtering thin films on substrates. More specifically, the subject matter disclosed herein relates to methods of arc suppression during sputtering of thin film layers on substrates. Background technique [0002] Sputter deposition involves ejecting material from a target (ie, material source) and depositing the ejected material on a substrate to form a thin film. A plasma discharge is maintained between the target and the substrate in the sputtering chamber during deposition by coupling RF or DC power from the power supply to the plasma, wherein the target acts as a cathode with a negative potential during sputtering. [0003] Occasionally forms between the target (i.e., cathode) and other materials in the chamber (e.g., chamber walls, plasma field, substrate, substrate carrier, etc.) at anodic potential due to charge buildup on the cathode arc. Once established, the arc can contin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/34H01J37/302
CPCH01J37/3444H01J37/32944H01J37/3476H01J37/32935
Inventor S·T·哈罗兰
Owner PRIMESTAR