Preparation method for nano-electromechanical resonator based on graphene

A graphene and resonator technology, applied in electrical components, impedance networks, etc., can solve problems such as transistor stability deterioration, and achieve good mechanical properties.

Inactive Publication Date: 2012-01-11
XIDIAN UNIV
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Problems solved by technology

[0004] At present, integrated circuit transistors are generally made of silicon materials. When the size of si

Method used

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  • Preparation method for nano-electromechanical resonator based on graphene
  • Preparation method for nano-electromechanical resonator based on graphene
  • Preparation method for nano-electromechanical resonator based on graphene

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Embodiment Construction

[0024] The technical solution of the present invention will be described in detail below.

[0025] Figure 1a A structure diagram of the resonator proposed by the present invention is shown. like Figure 1a As shown, the resonator includes an insulating substrate 102 , a substrate gate electrode 101 , a graphene resonator 103 , a source electrode 104 and a drain electrode 105 . Figure 1b further shows Figure 1a A cross-sectional view of the structure shown, as Figure 1b As shown, between the graphene resonator 103 and the substrate gate electrode 101 is a channel formed after the insulating substrate 102 is etched. Preferably, the substrate gate electrode 101 is a P-type silicon gate electrode.

[0026] The manufacture method of described graphene resonator is as follows:

[0027] 1. Using a transition metal as a catalyst, the catalyst is deposited on the surface of the first insulating substrate; then, using methane or acetylene as a carbon source, utilizing chemical va...

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Abstract

The invention relates to a preparation method for a nano-electromechanical resonator based on graphene. The preparation method provided by the invention comprises the following steps: (1) using transition metal as a catalyst and depositing the catalyst onto the surface of a first insulating substrate; then, using methane or acetylene as a carbon source and depositing carbon atoms onto the surface of the first insulating substrate at high temperature with a chemical gas phase deposition method to form a thin graphene layer; (2) carrying out transfer printing on the obtained thin graphene layer onto a second insulating substrate with a graph transfer printing method; (3) manufacturing metal material into a source electrode and a drain electrode by utilizing a metal vapor deposition technique; (4) rotatably coating protective glue on the surface of a sample and corroding one part of the second insulating substrate under the thin graphene layer to form a channel; and (5) corroding the protective glue and obtaining the nano-electromechanical resonator. The graphene resonator provided by the invention has the advantages of good electrical property and mechanical property. The preparation method is compatible with the existing MEMS (Micro Electro Mechanical System) process and can be used for mass integrated circuit production in future.

Description

technical field [0001] The invention belongs to the field of nano-electromechanical systems, can be used as sensors, actuators, mixers, and can be used in the fields of radio frequency communication and information processing. Background technique [0002] Nano-Electro-Mechanical System (Nano-Electro-Mechanical System, referred to as NEMS) refers to a type of ultra-small micro-electro-mechanical system with nanotechnology characteristics in terms of characteristic size and effect, generally refers to the characteristic size of sub-nanometer to hundreds of nanometers, nanometer-scale The new effect produced by the structure is the working characteristic of devices and systems. NEMS devices have the advantages of ultra-high mechanical resonance frequency, quality factor, ultra-high mass and force-sensing sensitivity, and extremely low power consumption. The silicon carbide NEMS resonant device with a scale of 100 nm in the prior art has high frequency, high quality factor, an...

Claims

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Application Information

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IPC IPC(8): H03H3/02
Inventor 王卫东牛翔宇纪翔樊康旗
Owner XIDIAN UNIV
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