20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate

A technology of aluminum nitride ceramics and aluminum nitride substrates, applied in electrical components, circuits, waveguide-type devices, etc., can solve the problem that the attenuation accuracy cannot meet the requirements, the resistance to high and low temperature shock performance is poor, and the impedance and attenuation accuracy are out of practice. requirements and other issues, to achieve the effect of improving performance, increasing high and low temperature impact resistance, and reducing defective products

Inactive Publication Date: 2012-01-25
苏州市新诚氏通讯电子股份有限公司
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, due to design reasons, the attenuation accuracy of domestic 20W-20dB attenuators cannot meet the requirements, and the high and low temperature impact resistance is poor. After the high and low temperature impact test is completed, the impedance and attenuation accuracy will deviate from the actual required range.

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  • 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate
  • 20W 20dB attenuation sheet of high-power aluminum nitride ceramic substrate

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Embodiment Construction

[0013] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0014] Such as figure 1 As shown, the high-power aluminum nitride ceramic substrate 20 watts 20dB attenuator includes a 5*5*1MM aluminum nitride substrate 1, the back of the aluminum nitride substrate 1 is printed with a back guide layer, and the front of the aluminum nitride substrate 1 Wires 2 and resistors R1, R2, R3 are printed. The resistors R1, R2, R3 are connected by wires to form an attenuation circuit. The attenuation circuit is electrically connected to the back conductive layer through silver paste, so that the attenuation circuit is grounded. The attenuation circuit is symmetrical along the center line of the aluminum nitride substrate, the output end of the attenuation circuit is connected to a pad 5, the input end is connected to a pad 6, and the two pads 5, 6 are symmetrical along the center line of the aluminum nitride substra...

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Abstract

The invention discloses a 20W 20dB attenuation sheet of a high-power aluminum nitride ceramic substrate, which comprises a 5*5*1mm aluminum nitride substrate, wherein a back conduction layer is printed on the back surface of the aluminum nitride substrate, a resistor and a lead are printed on the front face of the aluminum nitride substrate, the lead is connected with the resistor to form an attenuation circuit, the attenuation circuit is symmetrical along the center line of the aluminum nitride substrate, the output end and the input end of the attenuation circuit are respectively connected with a welding pad, and the two welding pads are symmetrical along the center line of the aluminum nitride substrate. According to the attenuation sheet, the resistor area is increased to ensure that high-low-temperature impact resistance property is improved, quenching to the resistor at high temperature when a lead is welded at the output end is avoided, the risk of the damaged attenuation sheet due to the quenched resistor in an actual use process is avoided so that the performance of the attenuation sheet is greatly improved, and the situation that the traditional attenuation sheet can be only applied to low frequency occasions is eliminated so that the attenuation sheet can be applied to 2G-3G networks.

Description

technical field [0001] The invention relates to an aluminum nitride ceramic attenuation sheet, in particular to an attenuation sheet with a high-power aluminum nitride ceramic substrate of 20 watts and 20 dB. Background technique [0002] At present, most communication base stations use high-power ceramic load chips to absorb the reverse input power of communication components. High-power ceramic load chips can only simply consume and absorb excess power, but cannot monitor the working conditions of the base station in real time. When the base station fails, it cannot make a timely judgment and has no protective effect on the equipment. The attenuator can not only absorb the reverse input power of the communication components in the communication base station, but also extract some signals from the communication components, monitor the base station in real time, and protect the equipment. [0003] At present, the attenuation accuracy of domestic 20W-20dB aluminum nitride ce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/22
Inventor 郝敏
Owner 苏州市新诚氏通讯电子股份有限公司
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