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Optimization method of lithography configuration parameter based on pattern search method

A configuration parameter and pattern search technology, which is applied to microlithography exposure equipment, photolithography exposure device, etc., can solve the problems of difficult to find lithography configuration parameters, low precision, large amount of calculation, etc., and achieve good lithography performance , fast optimization speed, simple search effect

Active Publication Date: 2013-07-10
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

However, the current lithography configuration parameter optimization method is limited to the optimization of one or two lithography configuration parameters. In order to achieve the optimal performance of the lithography machine, each parameter in the lithography machine should be reasonably configured; at the same time, the current The research mainly uses the traversal simulation method to determine the lithography configuration parameters, the calculation amount is very large, and the accuracy is low, it is difficult to find the optimal lithography configuration parameters

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  • Optimization method of lithography configuration parameter based on pattern search method
  • Optimization method of lithography configuration parameter based on pattern search method
  • Optimization method of lithography configuration parameter based on pattern search method

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[0027] The present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] figure 1 It is a flow chart of the optimization method of the lithography configuration parameters based on the pattern search method of the present invention, and its specific steps are:

[0029] Step 101, determine n types of lithography configuration parameters to be optimized, and select an initial value for each lithography configuration parameter to form a point {x i} (k，1) ={x 1 , x 2 , L x n} (k，1) , i={1, 2, L, n}, and let the number of cycles k=1; determine the variation range {x i ∈[a i , b i ]}={[a 1 , b 1 ], [a 2 , b 2 ] L, [a n , b n ]}, given the optimization accuracy allowable error ε>0, the maximum one-dimensional search times k max .

[0030] In the process of optimizing the lithographic configuration parameters, it is necessary to consider the parameters that have an impact on the lithographic performance. Therefore, ...

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Abstract

The invention provides an optimization method of lithography configuration parameters based on a pattern search method, which particularly comprises the following steps: determining optimization lithography configuration parameters and a lithography performance comprehensive evaluation function; updating a one-dimensional search range in a given search direction, performing one-dimensional searchwithin the one-dimensional search range, obtaining lithography configuration parameter points corresponding to the minimal lithography performance comprehensive evaluation function; obtaining a new one-dimensional search direction, performing one-dimensional search, obtaining lithography configuration parameter points corresponding to the minimal lithography performance comprehensive evaluation function; finishing the optimization when the cycle number reaches the maximum or meets the precision requirement. The invention takes into overall consideration of various lithography evaluation indexes, realizes the evaluation of the optimization results by constructing an evaluation function with various lithography performance evaluation indexes, and thus allows the optimized lithography configuration parameters to realize good lithography performance.

Description

technical field [0001] The invention relates to a method for optimizing photolithography configuration parameters based on a pattern search method, and belongs to the field of collaborative optimization design of photolithography machine configuration parameters. Background technique [0002] Optical lithography is a process in which a lithography machine uses optical projection exposure to etch the circuit device structure pattern on the mask onto the silicon wafer. The lithography machine is mainly composed of five parts: light source, lighting system, mask table, projection objective lens and silicon wafer workpiece table. In order to achieve good lithography performance and achieve a larger depth of focus in lithography, it is necessary to reasonably configure the parameters of each part of the lithography machine, such as the size of the numerical aperture NA of the projection objective lens, the value of the illumination coherence factor Sigma, the type of polarized li...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
Inventor 李艳秋郭学佳
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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