Method for measuring volatility of bottom anti-reflective coating materials
A bottom anti-reflection and coating material technology, which is applied in the direction of semiconductor/solid-state device testing/measurement, etc., can solve problems such as machine contamination and wafer failure, and achieve the effect of reducing machine failure
Active Publication Date: 2012-03-14
SEMICON MFG INT (SHANGHAI) CORP +1
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[0008] In order to solve the problem that the use of bottom anti-reflective coating in the prior art will cause the machine table to become dirty and cause wafer failure due to its "volatility" effect, it is necessary to measure and analyze the "volatility" characteristics of different bottom anti-reflective coating materials. The problem of analysis, the present invention discloses a method for measuring the volatile characteristics of a bottom anti-reflective coating material, said method comprising the following steps: coating a bottom anti-reflective coating on a wafer; Baking the wafer for a first time; measuring the thickness of the bottom anti-reflective coating to obtain a first thickness; baking the wafer at a second temperature for a second time; measuring the thickness of the bottom anti-reflective coating to obtain Obtaining a second thickness; using the first thickness and the second thickness to measure the volatility characteristics of the material of the bottom anti-reflective coating
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[0022] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.
[0023] In order to thoroughly understand the present invention, detailed steps and structures will be proposed in the following descriptions, so as to illustrate how the present invention solves the problem that the use of bottom anti-reflective coating in the prior art will cause the machine platform to become unstable due to its "volatility" effect. Contamination, leading to wafer failure, requires the measurement and analysis of the "volatility" properties of different BARC materials. Obviously, the practice of the invention is not limited to specific detail...
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The invention relates to a method for measuring the volatility of bottom anti-reflective coating materials. The method comprises the following steps of: coating a bottom anti-reflective coating on a wafer; baking the wafer at a first temperature for a first time; measuring the thickness of the bottom anti-reflective coating to obtain a first thickness; baking the wafer at a second temperature for a second time; measuring the thickness of the bottom anti-reflective coating to obtain a second thickness; and measuring the volatility of a bottom anti-reflective coating material by the first thickness and second thickness. According to the method provided by the invention, in a semiconductor manufacturing process, the 'volatility' of different bottom anti-reflective coating materials can be measured. Accurate conclusions can be obtained after measurement and analysis, and simple steps can be used for obtaining an optimal scheme of bottom anti-reflective coating materials so as to select a bottom anti-reflective coating material with lowest volatility, thereby reducing risks such as machine faults and the like caused by the bottom anti-reflective coating.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for measuring the volatility characteristics of bottom anti-reflection coating materials. Background technique [0002] With the development of VLSI technology, semiconductor technology has now entered the era of ultra-deep submicron. In semiconductor manufacturing processes, the use of highly absorptive anti-reflective coatings in photolithography is a simple way to reduce the problems caused by back reflection of light from highly reflective substrates. The two main disadvantages of back reflectivity are thin film interference effects and reflective scoring. As the thickness of the resist varies, thin film interference or standing waves cause changes in the critical linewidth dimension due to changes in the total light intensity in the resist film. Reflective notching becomes more severe when the device surface is patterned through photoresist con...
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IPC IPC(8): H01L21/66
Inventor 罗大杰安辉
Owner SEMICON MFG INT (SHANGHAI) CORP