Method for measuring volatility of bottom anti-reflective coating materials

Abstract

The invention relates to a method for measuring the volatility of bottom anti-reflective coating materials. The method comprises the following steps of: coating a bottom anti-reflective coating on a wafer; baking the wafer at a first temperature for a first time; measuring the thickness of the bottom anti-reflective coating to obtain a first thickness; baking the wafer at a second temperature for a second time; measuring the thickness of the bottom anti-reflective coating to obtain a second thickness; and measuring the volatility of a bottom anti-reflective coating material by the first thickness and second thickness. According to the method provided by the invention, in a semiconductor manufacturing process, the 'volatility' of different bottom anti-reflective coating materials can be measured. Accurate conclusions can be obtained after measurement and analysis, and simple steps can be used for obtaining an optimal scheme of bottom anti-reflective coating materials so as to select a bottom anti-reflective coating material with lowest volatility, thereby reducing risks such as machine faults and the like caused by the bottom anti-reflective coating.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for measuring the volatility characteristics of bottom anti-reflection coating materials. Background technique [0002] With the development of VLSI technology, semiconductor technology has now entered the era of ultra-deep submicron. In semiconductor manufacturing processes, the use of highly absorptive anti-reflective coatings in photolithography is a simple way to reduce the problems caused by back reflection of light from highly reflective substrates. The two main disadvantages of back reflectivity are thin film interference effects and reflective scoring. As the thickness of the resist varies, thin film interference or standing waves cause changes in the critical linewidth dimension due to changes in the total light intensity in the resist film. Reflective notching becomes more severe when the device surface is patterned through photoresist con...

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Problems solved by technology

[0008] In order to solve the problem that the use of bottom anti-reflective coating in the prior art will cause the machine table to become dirty and cause wafer failure due to its "volatility" effect, it is necessary to measure and analyze the "volatility" characteristics of different bottom anti-reflective coating materials. The problem of analysis, the present invention discloses a method for measuring the volatile characteristics of a bottom anti-reflective coating material, said method comprising the following steps: coating a bottom anti-reflective coating on a wafer; Baking the wafer for a first time; measuring the thickness of the bottom anti-reflective coating to obtain a first thickness; baking the wafer at a second temperature for a second time; measuring the thickness of the bottom anti-reflective coating to obtain Obtaining a second thickness; using the first thickness and the second thickness to measure the volatility characteristics of the material of the bottom anti-reflective coating

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