Preparation method of double-perovskite ferroelectrics (FET)-antiferromagnetism (AFM) compound molecule with oxygen bridge

An antiferromagnetic and perovskite technology, applied in the field of electronic materials

Inactive Publication Date: 2012-03-21
纵坚平
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0003] Due to the CMR effect obtained in the manganese oxide antiferromagnetism (antiferromagnetism, AFM) compound system, it is often necessary to apply a

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  • Preparation method of double-perovskite ferroelectrics (FET)-antiferromagnetism (AFM) compound molecule with oxygen bridge
  • Preparation method of double-perovskite ferroelectrics (FET)-antiferromagnetism (AFM) compound molecule with oxygen bridge
  • Preparation method of double-perovskite ferroelectrics (FET)-antiferromagnetism (AFM) compound molecule with oxygen bridge

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Embodiment Construction

[0105] The following examples further describe the present invention, but the present invention is not limited by the following examples.

[0106] The following detailed description includes descriptions of one or more devices and / or processes. These descriptions are intended to deepen the clarification of the claims.

[0107] The present description of the process and technology in this patent can be utilized with (existing) many different types of powders, as it is readily understood by those skilled in the art.

[0108] This example will introduce the NdMnO 3 and BaTiO 3 The specific implementation method of the wrapped composite AFF powder.

[0109] Specific steps are as follows:

[0110] 1. Select BT (BaTiO3) powder with uniform particles, which can be prepared by other methods, such as sol-gel method, hydrothermal method, supergravity method, etc., and sintered at high temperature. The powder can follow the usual doping replacement method, such as doping Y, Ca, Zr a...

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Abstract

The invention discloses a preparation method of a double-perovskite ferroelectric (FET)-antiferromagnetic (AFM) compound molecule with an oxygen bridge. In the invention, a method for compounding an FET molecule with an AFM molecule with different physical properties is described. A chemically-synthesized AFF (Antiferromagnetism-ferroelectrics) material can form an ABO3 double-perovskite compound structure with an oxygen bridge Bafm-O-Bfet. A method for compounding BaTiO3 serving as an FET typical material with NdBaMnO3 serving as an AFM typical material is taken as an example in the invention.

Description

technical field [0001] The content of the present invention relates to the subject field of electronic materials, describing two molecules with different physical properties, in ABO 3 The technical method of chemical synthesis under double calcium state structure. Background technique [0002] In the 1950s, humans had discovered the colossal magnetoresistance (CMR) effect of manganese oxide compounds. Following the discovery of the magnetic multilayer resistance (giant magnetoresistance, GMR) effect in 1989, in 1993, at room temperature in perovskite ABO 3 Structural derivatives LaBaMnO 3 (LBMO) also found a CMR effect. [0003] Due to the CMR effect obtained in the manganese oxide antiferromagnetism (antiferromagnetism, AFM) compound system, it is often necessary to apply a strong external magnetic field at a very low temperature, and the characteristics of insensitivity to external electric fields limit the application of CMR. [0004] The magnetoresistance effect of C...

Claims

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Application Information

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IPC IPC(8): C04B35/468C04B35/36
Inventor 纵坚平
Owner 纵坚平
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