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Short circuit defect detection device and method

A short-circuit defect and testing device technology, which is applied in the direction of measuring devices, semiconductor/solid-state device testing/measurement, and electrical measurement, can solve the problem of low positioning accuracy, achieve the effect of improving sensitivity and positioning accuracy, and shortening time

Active Publication Date: 2015-07-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In the process of locating the short-circuit defect of the metal connection with OBIRCH technology, the sensitivity of finding the short-circuit defect on the long metal connection of the short-circuit defect device and the problem of low positioning accuracy are solved, so as to meet the needs of subsequent physical analysis for accurate positioning of the short-circuit defect

Method used

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  • Short circuit defect detection device and method
  • Short circuit defect detection device and method

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specific Embodiment 1

[0041] Specifically, the structure of a short-circuit defect testing device proposed by the present invention is as follows: figure 2 As shown, the device includes several first comb-shaped structures 201, several second comb-shaped structures 202, first terminals 207 and second terminals 208;

[0042] The first comb-shaped structure 201 is composed of a first metal wire 204 as a comb handle and a plurality of first linear metal wires 203 as comb teeth, wherein the first linear metal wires 203 have the same length, and the first The straight metal wires 203 are equally spaced and parallel to each other, and the first metal wire 204 is connected to the middle of the first straight metal wire 203 in a cross;

[0043] The second comb-shaped structure 202 is composed of a second metal wire 206 as a comb handle and a plurality of second linear metal wires 205 as comb teeth, wherein the second linear metal wires 205 have the same length, and the second linear metal wires 205 have t...

specific Embodiment 2

[0063] Specifically, the structure of a short-circuit defect testing device proposed by the present invention is as follows: image 3 As shown, the device includes several first comb-shaped structures 301, several second comb-shaped structures 302, first terminals 307 and second terminals 308;

[0064] The first comb-shaped structure 301 is composed of a first metal wire 304 as a comb handle and a plurality of first linear metal wires 303 as comb teeth, wherein the first linear metal wires 303 have the same length, and the first The straight metal wires 303 are equally spaced and parallel to each other, and the first metal wires 304 are vertically connected to the first straight metal wires 303;

[0065] The second comb-shaped structure 302 is composed of a second metal wire 306 as a comb handle and a plurality of second linear metal wires 305 as comb teeth, wherein the second linear metal wires 305 have the same length, and the second linear metal wires 305 have the same leng...

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Abstract

The invention provides a short circuit defect detection device and a short circuit defect detection method. The device comprises a plurality of comb-shaped structural bodies and two wiring ends, wherein the comb-shaped structural bodies consist of a plurality of straight line type metal connecting lines and metal conducting wires, the straight line type metal connecting lines are mutually parallel at equal intervals, the metal conducting wires are connected with the straight line type metal connecting lines, the comb-shaped structural bodies are alternately ranged between the two wiring ends, in addition, the straight line type connecting lines of the adjacent comb-shaped structural bodies are relatively inserted, the metal conducting wires of the comb-shaped structural bodies respectively extend in the direction towards the same side until being connected with the wiring ends, and the insertion parts of the straight line type metal connecting lines have the length range being 1 micrometer to 20 micrometers. When an optical beam induced resistance change (OBIRCH) technology is adopted in the device provided by the invention for finding the short circuit defects, the short circuit defect can be positioned into the two inserted straight line type metal connecting lines under the condition of maintaining the long total effective length, the detection sensitivity and the positioning precision are improved, in addition, the finding time required by subsequent observation and analysis of short circuit defect forms by physical analysis measures is shortened, and the failure analysis efficiency is improved.

Description

technical field [0001] The invention relates to a semiconductor testing device and method, in particular to a short-circuit defect testing device and method. Background technique [0002] At present, in the process of manufacturing a wafer (wafer) in a semiconductor integrated circuit (IC) process, the connection between the semiconductor devices fabricated on the wafer is realized through metal interconnection, and the metal interconnection mainly uses metal wiring as a conductive medium. However, the metal interconnection short defect is one of the main failure modes in the IC process, which has a great impact on the wafer yield. Therefore, monitoring and failure analysis of short-circuit defects in metal wiring can promote the improvement of IC technology and increase the yield of wafers. In the prior art, a failure analysis test is designed for the short-circuit defect of the metal wiring. [0003] With the advancement of IC technology, the size of IC technology contin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01R31/02
Inventor 龚斌张卿彦
Owner SEMICON MFG INT (SHANGHAI) CORP
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