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Low-voltage bandgap reference voltage generating circuit

A reference voltage and circuit generation technology, which is applied in the direction of adjusting electrical variables, control/regulation systems, instruments, etc.

Inactive Publication Date: 2012-03-21
WUXI ZHONGPU MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, bipolar transistors are generally used in current bandgap reference circuits, so that the bandgap reference circuit can generally only be realized by using Bi-CMOS (Bipolar Complementary Metal Oxide Semiconductor) technology instead of standard CMOS technology. accomplish

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  • Low-voltage bandgap reference voltage generating circuit

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Embodiment Construction

[0019] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0020] figure 1 It is a schematic circuit diagram of the bandgap reference voltage generating circuit 100 in an embodiment of the present invention. Please see figure 1 As shown, the bandgap reference voltage generating circuit 100 includes a diode D1, a diode D2, resistors R1, R2 and R3, the cathode (N terminal) of the diode D1 is grounded, the anode (P terminal) is connected to the ground via the resistor R1, and the diode D2 The cathode of the resistor is grounded, the anode is connected to one end of the resistor R3, and the other end of the resistor R3 is connected to the ground via the resistor R2. If the diode D1 is regarded as a reference diode, then the diode D2 includes multiple reference diodes connected in parallel, which can make the diodes D1 and D2 better matched, in figure 1 The diode D2 in the example includes 8 reference diodes conn...

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Abstract

The invention provides a bandgap reference voltage generating circuit, which comprises a first diode, a second diode, a first resistor, a second resistor, a third resistor and a fourth resistor. The cathode of the first diode is connected with a first reference voltage, the anode of the first diode is connected with the first reference voltage through the first resistor, the cathode of the second diode is connected with the first reference voltage, the anode of the second diode is connected with one end of the third resistor, the other end of the third resistor is connected with the first reference voltage through the second resistor, and one end of the fourth resistor is connected with the first reference voltage. Current directly related to current mixed by current flowing over the second resistor and current flowing over the third resistor flows over the fourth resistor so as to obtain reference voltage at the other end of the fourth resistor. The first diode is a reference diode, and the second diode comprises a plurality of reference diodes in parallel connection. Original bipolar transistors are replaced by the diodes so that the bandgap reference voltage generating circuit can be achieved by standard complementary metal-oxide-semiconductor (CMOS) technology.

Description

【Technical field】 [0001] The invention relates to the field of integrated circuits, in particular to a low-voltage bandgap reference (Bandgap Reference) voltage generating circuit. 【Background technique】 [0002] The bandgap reference circuit can provide a stable reference voltage in a temperature changing environment, so it is widely used in circuits such as power regulators, A / D and D / A converters. Traditional bandgap reference circuits utilize a positive temperature coefficient voltage V T For a voltage with a negative temperature coefficient V BE Compensated so that a temperature invariant DC output voltage can be produced, typically 1.2 volts, where the voltage V BE Usually the base-emitter voltage difference of a bipolar transistor (Bipolar Transistor). [0003] The output voltage of the above-mentioned bandgap reference circuit is usually about 1.2V, and its power supply voltage generally needs to be greater than 1.2V, which limits the application of the bandgap re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/30
Inventor 韦钢
Owner WUXI ZHONGPU MICROELECTRONICS CO LTD