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Method of Forming Isolation Trench Using Hard Mask

A technology of isolation trenches and hard masks, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve problems such as unsatisfactory temperature conditions, and achieve the goals of increasing the scope of use, improving production yield, and saving production costs Effect

Active Publication Date: 2017-06-09
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the temperature range of some existing equipment (chiller) is 20°C to 90°C, which cannot meet the temperature conditions of the above etching process.
And adopt the method for forming the isolation trench in the prior art, there will be burr (grass) at the bottom of the trench, such as figure 1 shown

Method used

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  • Method of Forming Isolation Trench Using Hard Mask
  • Method of Forming Isolation Trench Using Hard Mask
  • Method of Forming Isolation Trench Using Hard Mask

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Embodiment Construction

[0015] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0016] see figure 2 , figure 2 is a flow chart of the method for forming isolation trenches using a hard mask of the present invention. Method of the present invention comprises the steps:

[0017] A semiconductor substrate is provided, and a hard mask layer is formed on a surface of the semiconductor substrate. Preferably, the semiconductor substrate may be a silicon substrate. Preferably, the hard mask layer is a silicon nitride or silicon oxide hard mask layer, and the thickness of the hard mask layer is less than 3000 angstroms.

[0018] A mask layer having a groove pattern is formed on the surface of the hard mask layer. Specifically, the mask layer with a groove pattern may be a photoresist layer with a groove pattern, or may be a photoresist layer wi...

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Abstract

The invention relates to a method for forming an isolation trench by using a hard mask, comprising the following steps: providing a semiconductor substrate, forming a hard mask layer on the surface of the semiconductor substrate; forming a groove with a groove on the surface of the hard mask layer patterned mask layer; using the mask layer with a groove pattern as a mask, at a temperature of 20° C., using etching gas to etch the hard mask layer to form isolation trenches on the semiconductor substrate , the etching gas includes sulfur hexafluoride, oxygen and hydrogen bromide. The method of the invention can be carried out at a temperature of 20° C., which effectively improves the application range of existing equipment and is beneficial to saving production costs.

Description

technical field [0001] The invention relates to a method for forming an isolation trench by using a hard mask, in particular to a method for forming a deep isolation trench by using a hard mask. Background technique [0002] Currently, device isolation using isolation trench technology has become a conventional technology. In the process of etching a semiconductor substrate to form isolation trenches, a hard mask layer is often used. In the prior art, isolation trenches are usually made of sulfur hexafluoride (SF 6 ) gas and oxygen (O 2 ) is formed by etching with a mixed gas, and the etching temperature is usually lower than 15°C. However, the temperature range of some existing equipment (chiller) is 20° C. to 90° C., which cannot meet the above temperature conditions of the etching process. And adopt the method for forming the isolation trench in the prior art, there will be burr (grass) at the bottom of the trench, such as figure 1 shown. Contents of the invention ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/76H01L21/308
Inventor 齐龙茵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP