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Radiation detection device and manufacturing method

A manufacturing method and detection device technology, applied in radiation control devices, radiation intensity measurement, electrical components, etc., can solve problems such as insufficient bonding force, semiconductor damage, poor thickness control, etc.

Inactive Publication Date: 2016-01-27
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0027] During the fabrication of such devices, it is inconvenient to deposit insulating materials on the semiconductor surface because at low temperatures there is a risk of insufficient adhesion and poor thickness control, while at high temperatures the semiconductor has danger of being damaged

Method used

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  • Radiation detection device and manufacturing method
  • Radiation detection device and manufacturing method
  • Radiation detection device and manufacturing method

Examples

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Embodiment Construction

[0083] exist figure 1 In, a semiconductor crystal volume is shown forming a parallelepiped-shaped semiconductor block 100 with a square cross-section, which is shown in plan view so that the figure shows the square shape of the semiconductor block 100 upper surface. The semiconductor material here is cadmium zinc telluride. Other semiconductor materials can also be used. The side length of the square is several centimeters, here 2.5 cm. Strips 110 of metal are deposited on the upper surface of said semiconductor block 100 , directly on the semiconductor material, the metal used here being gold or, according to a variant, platinum. Other conductive metals can also be used.

[0084] exist figure 1 In , twelve metal strips 110 are seen extending parallel to each other along a direction 105 parallel to one side of the square, called the first direction for the sake of presentation. Said strips 110 are formed at the surface of said semiconductor block 100 directly on its up...

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PUM

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Abstract

The method involves subjecting a volume of semiconductor material (100) to local separations of charges between positive and negative loads under an effect of ionizing radiations. Two electrodes (110) selected from a series of electrodes is placed on a surface (160) of the volume of semiconductor material. The volume of semiconductor material and a support (300) carrying two electrodes (310) of other series of electrodes are assembled, where the support is made of ceramic or alumina. A surface (560) of an electric insulating material is assembled against the former surface of the material. The electric insulating material is an Electroscience (ESL) 4909-MOD material. An independent claim is also included for an ionizing radiations detecting device comprising a volume of semiconductor material.

Description

technical field [0001] The present invention relates to devices for the detection of ionizing radiation, such as gamma radiation, with spatial resolution, and methods of making such devices. The device can be used in the security field, or in scientific or medical imaging studies, such as single photon emission tomography (TEMP). Background technique [0002] Detectors are known which use a semiconductor crystal, such as cadmium telluride (CdTe) or cadmium zinc telluride (CdZnTe), inside which an electric field is applied by an anode and a cathode arranged on both sides of the crystal. [0003] This ionizing radiation interacting with the crystal causes the separation of charges, that is, the formation of electron-hole pairs, and the electrons and holes initially formed at the same site rapidly migrate in opposite directions under the action of an electric field. Electrons and / or holes can thus be collected, that is to say an electrical signal is formed from the charge flow...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T1/24H01L31/18H01L31/115H01L31/0224H01L27/146
CPCG01T1/24H01L31/0224H01L31/085
Inventor O·莫内G·蒙特蒙L·韦尔热M-C·让泰
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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