Epoxy resin composite material

A technology of epoxy resin and composite material, applied in the field of chemistry, can solve the problems of adding silicon wafers, etc., and achieve the effect of improving yield, reducing edge collapse rate, good economic benefits and market prospects
CN102408679AInactive Publication Date: 2012-04-11TIANWEI NEW ENERGY HLDG +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
TIANWEI NEW ENERGY HLDG
Publication Date
2012-04-11
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides an epoxy resin composite material, comprising epoxy resin and powder material, wherein the mass proportion of the epoxy resin to the powder material is 9: 1-6: 4; the coefficient of thermal expansion of the powder material is 0.1-3.5 PPM, and mean particle size D50 thereof is 0.1-10 microns. The epoxy resin composite material provided by the invention can obviously lower edge breakage rate, crack rate and gap rate during the production process of the silicon wafer, and obviously raise the yield of production of silicon wafer, and has excellent economic benefit and market prospect.
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Description

technical field

[0001] The invention relates to the chemical field, in particular to an epoxy resin composite material. Background technique

[0002] With the decrease of fossil energy and the deterioration of the environment, photovoltaic power generation, as a clean and renewable energy, has gradually become the focus of attention and has been widely used in developed countries such as Europe and the United States. Among them, crystalline silicon photovoltaic has become the main photovoltaic power generation technology due to its low cost and mature technology.

[0003] The crystalline silicon photovoltaic industry chain includes silicon raw materials-silicon wafers-cells-modules-systems. Among them, silicon wafer manufacturing includes crystal growth, multi-line mechanical cutting, degumming and cleaning, inspection and packaging. Since the silicon crystal needs to be bonded and fixed on the cutting table for cutting, its production process needs to be glued first and t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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