33results about How to "Reduce chipping rate" patented technology

The invention provides a preparation method for a blue glass infrared cut-off filter. The method includes the steps that film system is selected according to transmittance and a preset transmittance of blue glass, and film coating is respectively carried out on two opposite surfaces of the blue glass by means of film materials according to the selected film system; a UV film is attached to the surface of one film; the blue glass is pasted to a cutting table of an ADT cutting machine through the UV film; the blue glass is cut at the cutting speed of 8 millimeters per second and at the revolving speed of 12000-18000 revolutions per minute. The method is achieved based on a blue glass film coating method, light splitting requirements of infrared cut-off filter can be met, the edge breakage rate of blue glass cutting can be effectively reduced through reasonable selection of blue glass cutting parameters, and thus the production yield of the blue glass infrared cut-off filter can be improved.

The invention relates to a method for controlling the acid-washing and edge-shearing quality of high-strength steel. The method comprises the following steps of: respectively calculating setting values of a disc shear gap H1 and an overlapping amount H2 by adopting a process computer system, sending obtained setting values to an operation computer system, regulating a disc shear driving device by the operation computer system according to the obtained setting values, and controlling a disc shear to carry out the edge shearing on the high-strength steel. According to the method disclosed by the invention, the edge shearing quality of a high-strength steel product with the shear strength being in a range of 380 N/mm<2> to 600 N/mm<2> can be increased, abnormal situations of shear breaking and the like can be reduced, and the actual production demands of the high-strength steel product in a cold continuous rolling unit can be met.

The invention discloses an acid-pickling edge-shearing control method of non-oriented silicon steel. The controlling method includes that a gap set value and an overlap quantity set value of a circle shear are calculated according to a supplied material thickness, a product silicon content level, a circle shear blade diameter and a scrap shear guiding rate. Then, the circle shear shears the non-oriented silicon steel according to the gap set value and the overlap quantity set value. The acid-pickling edge-shearing controlling method of the non-oriented silicon steel obviously improves the precision of shearing parameter setting and improves shearing quality of the non-oriented silicon steels. Therefore, occurrence rates of belt-breaking and blade-fracturing are reduced.

The invention provides an epoxy resin composite material, comprising epoxy resin and powder material, wherein the mass proportion of the epoxy resin to the powder material is 9: 1-6: 4; the coefficient of thermal expansion of the powder material is 0.1-3.5 PPM, and mean particle size D50 thereof is 0.1-10 microns. The epoxy resin composite material provided by the invention can obviously lower edge breakage rate, crack rate and gap rate during the production process of the silicon wafer, and obviously raise the yield of production of silicon wafer, and has excellent economic benefit and market prospect.

The invention relates to the field of super capacitor electrodes, in particular to a preparation method of a flexible electrode of a super capacitor, the flexible electrode and application of the flexible electrode. According to the technical scheme, the preparation method comprises the following steps: cleaning and drying a flexible carbon-based carrier; diluting a binder into a binder solution; stirring and mixing the activated carbon and the conductive carbon; mixing the mixed material with a binder solution; uniformly dispersing the mixture of the activated carbon and the conductive carbon in the binder solution; grinding the dispersed slurry to obtain electrode slurry; coating a flexible carbon-based carrier with the electrode slurry to form an electrode plate; baking the electrode plate; and finally, obtaining a baked finished product electrode plate. According to the technical scheme, the carbon fiber cloth serves as the current collector, the carbon fiber cloth has flexibility, the electrode piece made of the carbon fiber cloth can be bent, the material falling and edge breakage probability is low during bending, the service life of the super capacitor can be effectively prolonged, and capacitor internal short circuit caused by material falling and edge breakage is avoided.

The invention relates to a quartz rod butt joint table which comprises a base.. The table comprises a first mounting table, wherein the lower surface of the first mounting table is connected with thebase and first mounting table can slide in the first horizontal direction relative to the base, the upper surface of the first mounting table is connected with the lower end of a first elastic element, and the upper end of the first elastic element is used for being connected with a first quartz rod; a second mounting table, wherein the lower surface of the table is connected with the base; the upper surface of the second mounting table is connected with the lower end of a second elastic element, the upper end of the second elastic element is used for being connected with a second quartz rod,the second mounting table and the first mounting table are adjacently arranged in the first horizontal direction, and one end of the first quartz rod faces the second quartz rod. Edge breakage probability in the quartz rod butt joint process can be reduced, and the butt joint quality of the quartz rods and the light homogenizing effect of the quartz rods are guaranteed.

The invention relates to a grinding wheel manufacture method used for silicon wafer chamfering, and a manufacture device. The manufacture method comprises the following steps of: 1) adopting a hot pressed sintering method to sinter and form a round-disk-shaped metal binding agent diamond grinding wheel; 2) adopting an electrosparking method to trim the outer cylindrical surface shape of the metalbinding agent diamond grinding wheel obtained by sintering; 3) adopting a rigid alloy rolling wheel with a specific shape to carry out rolling on the outer cylindrical surface of the diamond grindingwheel to obtain a trapezoid groove; and 4) adopting a working electrode which has the same shape with the rigid alloy rolling wheel to carry out electrosparking trimming on the trapezoid groove of thediamond grinding wheel. The device is provided with a rough machining rigid alloy rolling wheel, a finish machining rigid alloy rolling wheel, a diamond grinding wheel trimming working electrode anda grinding wheel groove trimming working electrode to independently manufacture and process the diamond grinding wheel. According to the grinding wheel manufacture method disclosed by the invention, the problems in a traditional grinding wheel manufacture method used for silicon wafer chamfering that diamond abrasive particles are likely to fall, the section shape of the grinding wheel groove is low in accuracy, the shape and the interval of the groove are inconsistent and a groove bottom circular arc is difficult to form can be solved.

The invention provides an epoxy resin composite material which comprises epoxy resin and a powder material, the mass ratio of the epoxy resin to the powder material is 10: 1-2: 1, and the average particle size of the powder material is 1-15 microns; the epoxy resin is one or more of bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin or bisphenol F type epoxy resin; the powder material is polyamide rubber elastomer powder; the epoxy resin composite material further comprises a curing agent, and the curing agent is polymercaptan. According to the epoxy resin composite material, the edge breakage rate, the crack rate and the notch rate of the silicon wafer in the silicon wafer production process can be remarkably reduced, the yield of silicon wafer production can be remarkably improved, and good economic benefits and market prospects are achieved.

The invention relates to a processing method of a crystalline silicon rod and a product thereof. According to the machining method, the crystalline silicon rod is subjected to staged heat treatment, so that the hardness of the crystalline silicon rod is reduced, the internal stress of the crystalline silicon rod is reduced, the first pass yield of the crystalline silicon rod in the cutting processcan be increased finally, the yield is remarkably increased, and the line mark rate, the edge breakage rate and the fragment rate can be effectively reduced.