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Processing method of crystalline silicon rod and product thereof

A processing method and technology of crystalline silicon, which are applied in the directions of crystal growth, chemical instruments and methods, single crystal growth, etc., to achieve the effects of improving the pass rate, reducing the line trace rate, and improving the yield rate

Active Publication Date: 2021-02-09
LUOYANG CSI PHOTOVOLTAIC TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, there is still a lack of a method in the prior art that can significantly reduce the fragmentation rate of crystalline silicon rods, especially polycrystalline silicon rods, and improve the cutting yield.

Method used

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  • Processing method of crystalline silicon rod and product thereof
  • Processing method of crystalline silicon rod and product thereof
  • Processing method of crystalline silicon rod and product thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The present embodiment provides a kind of processing method of crystalline silicon rod, and its operation process is:

[0042](1) Place the ground polysilicon square rod (side length 200mm, length 300mm) into the high-purity quartz powder body with a purity of 99.99%, and place it in the muffle furnace, and flow into the muffle furnace at the same time Argon gas at 20L / min, turn on the heating;

[0043] (2) Firstly, the temperature is raised to 350°C, the heating time is 60 minutes, and the holding time is 20 minutes;

[0044] (3) heat up to 600°C again, and the heating time is 45min;

[0045] (4) The temperature is raised to 1150° C., the heating time is 170 minutes, the holding time is 300 minutes, and finally the heating is turned off for cooling.

Embodiment 2

[0047] The present embodiment provides a kind of processing method of crystalline silicon rod, and its operation process is:

[0048] (1) Put the ground polysilicon square rod (side length 200mm, length 300mm) into the high-purity alumina powder with a purity of 99%, and place it in the muffle furnace, and at the same time, pass it into the muffle furnace Helium with a flow rate of 10L / min, turn on the heating;

[0049] (2) Firstly, the temperature is raised to 300°C, the heating time is 45 minutes, and the holding time is 5 minutes;

[0050] (3) heat up to 500°C again, and the heating time is 15min;

[0051] (4) The temperature is raised to 1000° C., the heating time is 150 minutes, the holding time is 240 minutes, and finally the heating is turned off for cooling.

Embodiment 3

[0053] The present embodiment provides a kind of processing method of crystalline silicon rod, and its operation process is:

[0054] (1) Put the polysilicon square rod (side length 200mm, length 300mm) that has been processed through grinding into a high-purity graphite powder body with a purity of 99.9%, and place it in the muffle furnace, and flow into the muffle furnace at the same time Argon gas at 20L / min, turn on the heating;

[0055] (2) Firstly, the temperature is raised to 400°C, the heating time is 60 minutes, and the holding time is 30 minutes;

[0056] (3) Heating up to 700°C again, the heating time is 60min;

[0057] (4) The temperature is raised to 1000° C., the heating time is 180 minutes, the holding time is 360 minutes, and finally the heating is turned off for cooling.

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Abstract

The invention relates to a processing method of a crystalline silicon rod and a product thereof. According to the machining method, the crystalline silicon rod is subjected to staged heat treatment, so that the hardness of the crystalline silicon rod is reduced, the internal stress of the crystalline silicon rod is reduced, the first pass yield of the crystalline silicon rod in the cutting processcan be increased finally, the yield is remarkably increased, and the line mark rate, the edge breakage rate and the fragment rate can be effectively reduced.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon rod slicing, and in particular relates to a processing method of a crystalline silicon rod and a product thereof. Background technique [0002] Diamond wire slicing technology has been widely used in the field of crystalline silicon slicing due to its advantages of high processing efficiency, small kerf loss, high processing precision and environmental protection. At present, with the advancement of silicon wafer thinning, higher requirements are put forward for the control of silicon wafer fragmentation rate. There are obvious differences between polycrystalline silicon rods and single crystal silicon rods in terms of cutting processing efficiency and slicing yield. The rate is significantly higher than that of single crystal slices. [0003] The main reason for the difference between single and polycrystals is the difference in crystal quality, mainly in three aspects: first, the di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/02C30B29/06
CPCC30B28/02C30B29/06
Inventor 李飞龙李煜燚翟传鑫蒋俊峰熊震朱军
Owner LUOYANG CSI PHOTOVOLTAIC TECH CO LTD
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