Wafer taking method for semiconductor silicon wafer polishing

A semiconductor and silicon wafer technology, which is applied in the field of semiconductor grinding and silicon wafer removal, can solve the problems of edge chipping, difficulty in handling, and chipping of silicon wafers, and achieve the effect of reducing edge chipping rate and scratches.

Inactive Publication Date: 2014-02-26
浙江普通电子股份公司
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, in the silicon wafer grinding process, after the silicon wafer is ground, the silicon wafer is adsorbed on the grinding disc, and the silicon wafer needs to be taken out from the grinding disc. Take out the silicon wafer carrier planetary plate, and then touch the silicon wafer to the edge of the grinding disc with your hands, so that part of the silicon wafer is out of contact with the grinding disc, and grab the silicon wafer directly from the disengaged position by hand. The advantage of this process is that the removal speed is fast , but it is easy to cause scratches on the surface of the silicon wafer and edge chipping caused by the collision of the silicon wafer; the other is to use a small shovel to scoop the silicon wafer directly from the carrier planetary plate. This process is not easy to use and requires skilled operators. If Improper operation can easily cause edge chipping of silicon wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0007] The present invention will be further described below in conjunction with specific examples. details as follows:

[0008] Use a latex suction cup with a diameter of about 2-5cm (select the suction cup with the corresponding diameter according to the diameter of the silicon wafer). There is a hole in the center of the suction cup, and the back end of the suction cup is connected to a latex vacuum air bag tube with a length of about 6-10cm and a diameter of about 1cm to take the film. , When taking the piece, after about 1 / 5 of the air in the airbag tube is discharged, then the center hole of the latex suction cup is aligned with the 1 / 2 radius of the silicon wafer, and then the airbag is released, and the silicon wafer is adsorbed on the latex suction cup , After taking out the silicon wafer, expel the air in the airbag by hand, and the silicon wafer will automatically fall off from the latex suction cup.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a wafer taking method for semiconductor silicon wafer polishing. According to the method, a latex sucker with a hole in the center and an airbag at the rear end is used for taking a silicon wafer; during wafer taking, a user can exhaust part of air inside the airbag, then align the central hole of the latex sucker to the half-radius part of the silicon wafer and then release the airbag, accordingly, the silicon wafer is sucked onto the latex sucker; after the silicon wafer is taken out, the user can exhaust air inside the airbag by hand, and then the silicon wafer can automatically drop down from the latex sucker. By means of the wafer taking method for the semiconductor silicon wafer polishing, scratches on the surface of the silicon wafer and the edge breakage rate of a non-chamfering silicon wafer can be reduced, and the reject ratio of the silicon wafer is reduced from original 2% to 0.5%.

Description

technical field [0001] The invention relates to a method for taking out semiconductor polished silicon wafers. Background technique [0002] At present, in the silicon wafer grinding process, after the silicon wafer is ground, the silicon wafer is adsorbed on the grinding disc, and the silicon wafer needs to be taken out from the grinding disc. Take out the silicon wafer carrier planetary plate, and then touch the silicon wafer to the edge of the grinding disc with your hands, so that part of the silicon wafer is out of contact with the grinding disc, and grab the silicon wafer directly from the disengaged position by hand. The advantage of this process is that the removal speed is fast , but it is easy to cause scratches on the surface of the silicon wafer and edge chipping caused by the collision of the silicon wafer; the other is to use a small shovel to scoop the silicon wafer directly from the carrier planetary plate. This process is not easy to use and requires skille...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/34
CPCB24B37/345
Inventor 陈峰汪利峰
Owner 浙江普通电子股份公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products