Epitaxial substrate

Abstract

The invention discloses an epitaxial substrate which is used for growing a light-emitting diode epitaxy structure. The epitaxial substrate comprises a first surface, and a second surface opposite to the first surface; the distance between the first surface and the second surface is thickness H of the epitaxial substrate; the first surface of the epitaxial substrate is provided with a plurality of first grooves; each first groove is provided with a first bottom; the surface, opposite to the first bottom, of the epitaxial substrate is a growth surface; the growth surface is used for growing a light-emitting diode in an epitaxial way; a growth region is formed between the first bottom and the growth surface; the distance between the first bottom and the growth surface is thickness h of the growth region; and the relationship between the thickness h of the growth region and the thickness H of the epitaxial substrate can be shown as the following formula: h / H is less than 1 / 3.

Description

Technical field

[0001] The invention relates to an epitaxial substrate, in particular to an epitaxial substrate that can be used to grow a light-emitting diode epitaxial structure with good crystal lattice quality. Background technique

[0002] Currently, Light Emitting Diode (LED) has been widely used in many fields due to its low power consumption, long life, small size and high brightness.

[0003] Generally, the epitaxial structure of the light-emitting diode is directly grown on a silicon substrate. Due to the thermal expansion coefficient and lattice mismatch between the silicon substrate and the epitaxial structure of the light-emitting diode, the crystal lattice of the grown epitaxial structure of the light-emitting diode is of poor quality and even cracks. As a result, the use of silicon substrates is restricted. Summary of the invention

[0004] The following examples illustrate an epitaxial substrate that can be used to grow a light-emitting diode epitaxial structure wit...

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