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Epitaxial substrate

A technology of epitaxial substrate and epitaxial growth, which is applied in the direction of electrical components, electric solid devices, circuits, etc., can solve problems such as cracking, poor quality of epitaxial structure lattice of light-emitting diodes, restrictions on the use of silicon substrates, etc., and achieve good lattice quality , Avoid the effect of excessive accumulation of lattice stress

Active Publication Date: 2012-04-11
ZHANJING TECH SHENZHEN +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Generally, the LED epitaxy structure is grown directly on the silicon substrate. Due to the thermal expansion coefficient and lattice mismatch between the silicon substrate and the LED epitaxy structure, the lattice quality of the grown LED epitaxy structure is poor, or even cracked. As a result, the use of silicon substrates is limited

Method used

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Embodiment Construction

[0027] The embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0028] See figure 1 , The first embodiment of the present invention provides an epitaxial substrate 100 for growing a light emitting diode epitaxial structure 200. The epitaxial substrate 100 has a first surface 11 and a second surface 12 opposite thereto. The light emitting diode epitaxial structure 200 is epitaxially grown on the second surface 12 of the epitaxial substrate 100. In this embodiment, the first surface 11 is a flat surface. The material of the epitaxial substrate 100 may be silicon (Si) or silicon carbide (SiC). The distance between the first surface 11 and the second surface 12 is the thickness H of the epitaxial substrate.

[0029] The first surface 11 of the epitaxial substrate 100 has a plurality of first grooves 13 extending toward the second surface 12. In this embodiment, the plurality of first grooves 13 are arranged ...

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Abstract

The invention discloses an epitaxial substrate which is used for growing a light-emitting diode epitaxy structure. The epitaxial substrate comprises a first surface, and a second surface opposite to the first surface; the distance between the first surface and the second surface is thickness H of the epitaxial substrate; the first surface of the epitaxial substrate is provided with a plurality of first grooves; each first groove is provided with a first bottom; the surface, opposite to the first bottom, of the epitaxial substrate is a growth surface; the growth surface is used for growing a light-emitting diode in an epitaxial way; a growth region is formed between the first bottom and the growth surface; the distance between the first bottom and the growth surface is thickness h of the growth region; and the relationship between the thickness h of the growth region and the thickness H of the epitaxial substrate can be shown as the following formula: h / H is less than 1 / 3.

Description

Technical field [0001] The invention relates to an epitaxial substrate, in particular to an epitaxial substrate that can be used to grow a light-emitting diode epitaxial structure with good crystal lattice quality. Background technique [0002] Currently, Light Emitting Diode (LED) has been widely used in many fields due to its low power consumption, long life, small size and high brightness. [0003] Generally, the epitaxial structure of the light-emitting diode is directly grown on a silicon substrate. Due to the thermal expansion coefficient and lattice mismatch between the silicon substrate and the epitaxial structure of the light-emitting diode, the crystal lattice of the grown epitaxial structure of the light-emitting diode is of poor quality and even cracks. As a result, the use of silicon substrates is restricted. Summary of the invention [0004] The following examples illustrate an epitaxial substrate that can be used to grow a light-emitting diode epitaxial structure wit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20
CPCH01L27/153H01L33/20H01L33/007
Inventor TU BOMINHUANG SHISHENGHUANG JIAHONGYANG SHUNGUI
Owner ZHANJING TECH SHENZHEN
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