Method and system for controlling power on/off of power amplifier

A technology for controlling voltage and expressing control, which is applied in the field of communication, and can solve problems such as burnout of GaN power amplifiers, inability to support GaN power amplifier power-on and power-off, and uncontrollable power-off sequence

Inactive Publication Date: 2012-04-11
ZTE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the grid voltage power supply sequence of the traditional power amplifier is completed by the power supply of the remote radio unit (RRU). control
Such a situation directly leads to the burning of the GaN power amplifier
[0005] It can be seen that the traditional power sequence control method cannot support the power on and off of the GaN power amplifier.

Method used

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  • Method and system for controlling power on/off of power amplifier
  • Method and system for controlling power on/off of power amplifier
  • Method and system for controlling power on/off of power amplifier

Examples

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Embodiment Construction

[0038] In practical applications, when powering on and off the GaN power amplifier is controlled, it can be applied to such as figure 1 As shown in the system, the system includes a voltage isolation conversion module, a logic processing module, a switch drive module, a switch module, and may also include a voltage comparison module.

[0039] In general, whether the control voltage has been loaded successfully can be judged by the voltage comparison module, and the control voltage can be a negative gate voltage. For example: when the negative grid voltage reaches the target voltage value, confirm that the control voltage has been loaded successfully. The target voltage value may be a pinch-off threshold).

[0040] When the control voltage is successfully loaded, the voltage comparison module generates a voltage signal indicating that the control voltage is successfully loaded (may include high and low, positive and negative voltage signals, such as a signal of a successful gr...

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PUM

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Abstract

The invention discloses a method and a system for controlling power on / off of a power amplifier, wherein the method and the system can convert signals which show the success of voltage load control into voltage signals of an appropriate electrical level, and perform logic treatment on the voltage signals so as to generate driving module enable signals; and a driving module is enabled, thus driving signals are generated, and the input or disconnection of controlled voltage is realized. According to the technology for controlling the power on / off of power amplifier, not only is the serious grid voltage time sequence problem of GaN power amplifier solved, but also the technology is also suitable for the power amplifier which has requirements for the grid voltage time sequence; the control voltage can be negative grid voltage required by GaN and GaAs power amplifier, and also can be positive leakage voltage required by an LDMOS (lateral double-diffused metal oxide semiconductor); and the controlled voltage can be tens volts of higher positive leakage voltage required by GaN, GaAs, and also can be a plurality of volts of lower positive grid voltage required by the LDMOS. So, the normal load of the GaN power amplifier can be ensured, and the safety of power amplifier power on and power off of a power amplifier tube is ensured.

Description

technical field [0001] The present invention relates to the communication field, in particular to a method and system for controlling the power on and off of a power amplifier. Background technique [0002] The present invention relates to a method for strictly controlling the power-on and power-on sequence of a novel GaN HEMT (HEMT: High Electron Mobility Transistor, based on GaN material) power amplifier, in particular to the application of GaN power amplifiers in the (communication) field. [0003] At present, the power amplifiers commonly used in the radio frequency field are mainly LDMOS (Lateral double-diffused metal-oxide semiconductor, laterally diffused metal-oxide semiconductor field effect transistor). This type of power amplifier technology is relatively mature, and it is relatively difficult to improve efficiency and frequency band. , and GaN, a new material, can further improve efficiency and frequency band. GaN is the third-generation semiconductor material, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687
Inventor 申健
Owner ZTE CORP
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