Methods, devices, and systems relating to memory cells having a floating body

Abstract

Methods, devices and systems related to memory cells with floating bodies are disclosed. A memory cell includes a transistor including a drain and a source each formed in silicon and a gate positioned between the drain and the source. The memory cell can also include a bias gate recessed into the silicon and positioned between an isolation region and the transistor and configured to be operatively coupled to a bias voltage. Additionally, the memory cell can include a floating body within the silicon having a first portion adjacent to the source and the drain vertically offset from the bias gate and coupled to the A second portion of the first portion, wherein the bias gate is formed adjacent to the second portion.

Description

[0001] Related Application Cross Reference [0002] This application asserts U.S. Patent Application Serial No. 12 / 419,658 filed April 7, 2009 "Methods, Devices, and Systems Relating to Memory Cell Having a Floating Body)” filing date. technical field [0003] In general, embodiments of the invention relate to memory cells. More particularly, embodiments of the invention relate to memory cells having floating bodies, devices and systems utilizing the memory cells, and methods of forming and operating the memory cells. Background technique [0004] Conventional memory, such as DRAM, may include one transistor and one capacitor. However, there is a limit to the scalability of conventional memory due to the presence of the capacitor (and in particular the size of the capacitor). Accordingly, memories have been developed that contain one transistor (IT) and no capacitor as a memory cell, known as "capacitorless" memories. A capacitorless memory cell may include a floating b...

AI Technical Summary

Problems solved by technology

This is especially problematic during operation at higher temperatures

Additionally, conventional floating body memory cells suffer from poor data retention during hold, read, and write operations due to loss of charge from the floating body immediately after charge recombination

Also, since conventional floating body memory cells can have small floating bodies that are not configured to hold large amounts of charge, any loss of charge can lead to fluctuating or weakened signal

Images