Silicon wafer object table temperature control system of lithography machine and control method thereof

Abstract

The invention discloses a wafer object table temperature control system of a lithography machine and a control method thereof. The temperature control system comprises a silicon wafer object table, a mask plate and a lithography machine light source, as well as a temperature measurement device with a temperature sensor, an element and a computing control system; a silicon wafer holding area and a temperature measurement area are arranged on the silicon wafer object table; the silicon wafer holding area is located at the front end of the temperature measurement area; the temperature measurement device with the temperature sensor is arranged in the temperature measurement area; the element is located between the lithography machine light source and the mask plate; and the temperature measurement device, the computing control system and the element are connected in series to form a temperature control loop. Through the temperature control system and the control method thereof, the temperature of a silicon wafer during exposure can be controlled, which is beneficial to prevent the deformation of the silicon wafer caused by the temperature, so that better process alignment precision can be obtained and high uniformity among silicon wafers and batches during the continuous service of the lithography machine can be realized.

Description

Technical field [0001] The invention relates to a temperature control system and a control method thereof, in particular to a temperature control system and a control method of a silicon wafer stage of a photoetching machine. Background technique [0002] The photolithography process plays a pivotal role in the current manufacturing process of very large-scale integrated circuits. For photolithography technology, the photolithography equipment, process and mask technology are particularly critical. However, in the current process of silicon wafer lithography using photomasks, when the silicon wafer stage is irradiated by the lithography machine laser for a certain period of time, heating will occur, and the heat will cause the deformation of the silicon wafer, which will lead to During the continuous operation of the engraving machine, the accuracy of the process registration between wafers and wafers, batches and batches is reduced. In the face of this kind of situation, the in...

AI Technical Summary

Problems solved by technology

However, in the process of photolithography of silicon wafers using photomasks, when the silicon wafer stage is irradiated by the laser light of the photolithography machine for a certain period of time, heat will occur, and the heat will cause the deformation of the silicon wafer, which will lead to During the continuous operation of the engraving machine, the process registration accuracy between silicon wafers and batches decreases

In the face of this kind of situation, the industry usually adopts the method of intermittently cooling the wafer stage during the wafer exposure process to control the registration accuracy, but this method usually leads to a decrease in production capacity and a decrease in equipment utilization.

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