Method and device for testing characteristics of thin film transistor on array substrate

Abstract

The invention discloses a method and a device for testing the characteristics of a thin film transistor on an array substrate, and relates to the field of liquid crystal displays. The method and the device aim to improve the accuracy of test results. The method for testing the characteristics of the thin film transistor on the array substrate comprises the following steps of: determining the period of a gate test voltage signal and a drain-source test voltage signal which correspond to the characteristic to be tested of the thin film transistor and signal amplitude in each period, wherein both the gate test voltage signal and the drain-source test voltage signal are alternating current voltage signals; applying the gate test voltage signal to the gate of the thin film transistor, and applying the drain-source test voltage signal between the source and drain of the thin film transistor; and acquiring an output signal, which corresponds to the characteristic to be tested, of the thin film transistor. The method and the device can be used for the design verification and quality verification processes of a thin film transistor liquid crystal display.

Description

technical field [0001] The invention relates to the field of liquid crystal displays, in particular to a method and device for testing the characteristics of a thin film transistor on an array substrate. Background technique [0002] A thin film transistor liquid crystal display (TFT-LCD, Thin Film Transistor-Liquid Crystal Display) has the advantages of small size, low power consumption, and no radiation, and has gradually become a mainstream product of flat panel displays. TFT-LCD is formed by combining an array substrate and a color filter substrate, and liquid crystal is dripped between the array substrate and the color filter substrate. Wherein, gate lines and data lines are formed on the array substrate, and a plurality of pixel areas are defined by crossing the gate lines and data lines. TFTs and pixel electrodes are formed in the pixel areas, and a common electrode is formed on the color filter substrate. TFT-LCD controls the orientation of liquid crystal molecules ...

AI Technical Summary

Problems solved by technology

[0005] When the same signal acts on the TFT for a long time, it will produce a time stress effect, which will affect the relevant characteristics of the TFT

However, in the prior art, when testing the TFT characteristics, the voltage signals applied to each electrode of the TFT are DC signals, and the gate G adopts figure 2 The scanning method of the stepped voltage shown, therefore, is prone to time stress effects, which will lead to inaccurate test results, which deviate greatly from the real characteristics, and cannot reflect the real characteristics of the TFT.

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