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Semiconductor device

A semiconductor and conductive technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., to achieve the effect of expanding the circuit scale and preventing malfunctions

Inactive Publication Date: 2014-10-08
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the flowing current is limited by the protection resistor R

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0102] A first embodiment of the semiconductor device of the present invention will be described. The semiconductor device of the present embodiment includes a circuit including: a 3-terminal type thin film diode (in-circuit diode); and an ESD protection circuit for protecting the thin film diode. In addition, the semiconductor device according to the present embodiment only needs to include the above-mentioned circuits, and broadly includes circuits such as shift registers, active matrix substrates including the circuits, display devices, and the like.

[0103] Next, examples of the circuit of this embodiment will be described with reference to the drawings.

[0104] Figure 5 to Figure 18 It is a configuration diagram showing a part of the circuits of Examples 1 to 14, respectively. In this embodiment, both the in-circuit diode 1 and the protection diode 20 are N-channel three-terminal thin film diodes. In addition, for the sake of simplicity, the same reference numerals ...

Embodiment 1～3

[0106] Figure 5 The circuit of Example 1 shown has an in-circuit diode 1 and a protection circuit including a protection diode 20 . The first electrode and the gate electrode of the protection diode 20 are connected to the wiring 3 connected to the gate electrode of the in-circuit diode 1, and the second electrode of the protection diode 20 is connected to the VDD line. In addition, when the connection parts of the first electrode and the gate electrode of the protection diode 20 with respect to the wiring 3 are 3a and 3b, between the connection part 3a and the connection part 3b, the first electrode of the in-circuit diode 1 Connect to wiring 3. A connection portion of the first electrode of the in-circuit diode 1 to the wiring 3 is referred to as 3c.

[0107] In Embodiment 1, when a positive charge is input to the wiring 3 , a current flows from the wiring 3 to the VDD wiring through the protection diode 20 as shown in the figure. Therefore, the amount of current flowing...

Embodiment 4、5

[0111] exist Figure 8 In the illustrated example 4, the first electrode of the in-circuit diode 1 and the wiring 3 are connected through the wiring 4, and the first electrode and the gate electrode of the protection diode 20 are connected to the wiring 4. In this way, instead of the wiring 3, the first electrode and the gate electrode of the protection diode 20 can be connected to the wiring 4 for connecting the first electrode of the in-circuit diode 1 and the wiring 3. In the circuit of Example 4, when a positive charge is input to the wiring 3, the current also flows from the wiring 4 to the VDD wiring through the protective diode 20, so that the current flowing into the diode 1 in the circuit can be greatly reduced. amount.

[0112] In addition, in Figure 9 In the illustrated fifth embodiment, the gate electrode of the protection diode 20 is connected to the wiring 4 , and the first electrode of the protection diode 20 is connected to the wiring 3 . In this case, as i...

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PUM

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Abstract

The semiconductor device includes: a thin film diode (1); and a protection circuit including a protection diode (20), and the thin film diode (1) includes: a semiconductor layer having a first region, a second region, and a channel region; a gate electrode ; the first electrode (S1), which is connected to the first region and the gate electrode; and the second electrode (D1), which is connected to the second region, the thin film diode (1) is N-type, and the protective diode (20) The electrode on the anode side is connected to the wiring (3), and the wiring (3) is connected to the gate electrode or the first electrode of the thin film diode (1), or the thin film diode is P-type, and the cathode side of the protective diode The electrodes are connected to wirings that are connected to the gate electrodes or the first electrodes of the thin film diodes, and the protection circuit does not have a current flow direction that is opposite to that of the protection diode (20). (3) Other diodes connected. Accordingly, it is possible to suppress an increase in circuit scale and suppress deterioration of thin film diodes due to ESD.

Description

technical field [0001] The present invention relates to a semiconductor device including a circuit including an ESD (Electro Static Discharge) protection circuit. Background technique [0002] Semiconductor devices equipped with circuits, such as active matrix substrates, generally include circuits for protecting semiconductor elements in the circuits from ESD. This circuit is called "ESD protection circuit". [0003] edge reference Figure 35 A general ESD protection circuit will be explained. Figure 35 It is a diagram showing an example of an ESD protection circuit provided in an IC internal circuit having CMOS (Complementary Metal Oxide Semiconductor: Complementary Metal Oxide Semiconductor). The illustrated ESD protection circuit includes: a protection resistor R formed between an input terminal and a CMOS; and two protection diodes D1 and D2 with different polarities. The protection diodes D1 and D2 are both connected to the input signal line of the CMOS. [0004...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786G02F1/1345G02F1/1368H01L21/822H01L27/04
CPCG02F1/1368H01L27/0255H01L27/016H01L29/7869G02F1/136204
Inventor 森胁弘幸
Owner SHARP KK