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Chemical mechanical polishing method of aluminum

A chemical machinery, polishing head technology, applied in the direction of grinding machine tools, grinding devices, metal processing equipment, etc., can solve problems such as scratches

Active Publication Date: 2012-05-23
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since aluminum is a relatively soft material, its hardness is about 160MPa, and various by-products (by product) will be produced during the chemical mechanical polishing process, such as alumina particles, whose hardness is about 20000MPa, which is aluminum Hundreds of times, so it is easy to cause scratches on the surface of metal aluminum 12

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  • Chemical mechanical polishing method of aluminum
  • Chemical mechanical polishing method of aluminum
  • Chemical mechanical polishing method of aluminum

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Embodiment Construction

[0032] In the chemical mechanical polishing process of aluminum in the prior art, the by-products in the polishing process, such as aluminum oxide, are likely to cause scratches on the surface of the metal aluminum, affecting the reliability of the device.

[0033] In this technical solution, the first polishing process is first performed on the metal aluminum, so that the thickness of the remaining metal aluminum is a predetermined thickness, and then the second polishing process is performed until the dielectric layer is exposed, and the second polishing process and the first polishing process are non-identical. In-situ, thereby avoiding the impact of the by-products produced in the first polishing process on the second polishing process, reducing the scratches on the surface of the aluminum metal; and this technical solution will clean the parts to be polished after they are removed from the chemical mechanical equipment, avoiding In order to avoid scratches caused by cleani...

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Abstract

The invention discloses a chemical mechanical polishing method of aluminum. To be polished components comprise a substrate and a medium layer formed thereon. An opening is formed into the medium layer, and the opening is filled with metallic aluminum; the metallic aluminum fills the opening and covers the medium layer. The chemical mechanical polishing method comprises the steps of processing a first polishing for the metallic aluminum to the rest one of reserved thickness on the medium layer; processing a second polishing for the rest metallic aluminum until the medium layer is exposed, both the first polishing process and the second polishing process are not in normal position; and moving the to be polished components out of the chemical mechanism polishing equipment and then cleaning the surface of the components. The invention reduces the scratch of the surface of the metallic aluminum and also improves the reliability of device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing method for aluminum. Background technique [0002] Aluminum has good electrical conductivity, and its formation process and patterning process are relatively simple, so it has been widely used in the field of semiconductors, such as plugs, pads, interconnect lines, metal gates, etc. After the thin film of metal aluminum is formed, it is generally necessary to planarize the surface, and chemical mechanical polishing is the most commonly used planarization process. [0003] The equipment used in chemical mechanical polishing mainly includes a polishing head (head) and a polishing plate (platen), and a polishing pad (pad) is arranged on the polishing plate. During the polishing process, the surface to be polished of the part to be polished is fixed downward on the polishing disc, the polishing head is pressed down on the back of the part to...

Claims

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Application Information

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IPC IPC(8): B24B37/00
Inventor 蒋莉黎铭琦
Owner SEMICON MFG INT (SHANGHAI) CORP