Method of manufacturing gan-based film
A base film and axial direction technology, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., can solve the problems of difficult to obtain GaN substrates and expensive GaN substrates, and achieve less warpage, large master The effect of surface area
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[0038] 1. Measurement of thermal expansion coefficient of GaN crystal
[0039] grown from the HVPE method and have a 1 x 10 6 cm -2 dislocation density, 1×10 18 cm -2 Si concentration, 1×10 17 cm -2 The oxygen concentration and 1 x 10 16 cm -2 A GaN single crystal cut with a carbon concentration of 2 x 2 x 20 mm for evaluation (having an a-axis in the longitudinal direction and having any one of a C plane and an M plane as a plane parallel to the longitudinal direction, And the accuracy of plane orientation is within ±0.1°).
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