Method of manufacturing gan-based film

Abstract

A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 1.0 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

Description

technical field [0001] The present invention relates to a method of manufacturing a GaN base film capable of obtaining a GaN base film with a large main surface area and less warpage. Background technique [0002] GaN-based films are suitable for use as substrates and semiconductor layers in semiconductor devices such as light-emitting devices and electronic devices. Considering the matching or basic matching between the substrate and the GaN base film in terms of lattice constant and thermal expansion coefficient, the GaN substrate is the best as a substrate for manufacturing such a GaN base film. However, a GaN substrate is very expensive, and it is difficult to obtain such a GaN substrate having a large diameter whose main surface exceeds 2 inches in diameter. [0003] Therefore, a sapphire substrate is generally used as a substrate for forming a GaN-based film. A sapphire substrate and a GaN crystal are significantly different from each other in lattice constant and th...

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Problems solved by technology

However, the GaN substrate is very expensive, and it is difficult to obtain such a GaN substrate with a large diameter whose main surface exceeds 2 inches.

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