Etchant composition for forming copper interconnects

A composition and etching technology, which is applied in the direction of surface etching composition, electrical components, circuits, etc., can solve the problems of unresolved instability and insufficient etchant, achieve excellent etching profile and minimize the generation of residue , Minimize the effect of damage

Inactive Publication Date: 2012-05-23
DONGWOO FINE CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Further, hydrogen peroxide, as a conventional etchant for copper, is excellent in terms of etching profile, number of etched layers, and aging characteristics, but is not sufficient as an etchant because of the risk of its instability. agent

Method used

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  • Etchant composition for forming copper interconnects
  • Etchant composition for forming copper interconnects
  • Etchant composition for forming copper interconnects

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 8 and comparative example 1 to 3

[0035] Examples 1 to 8 and Comparative Examples 1 to 3: Preparation of Etching Compositions

[0036] The components and composition ratios of each etching composition prepared in 180 kg are shown in Table 1 below.

[0037] [Table 1]

[0038] CuCl 2

[0039] Example 7

[0040] Note) C 6 h 8 o 7 : Citric acid

Embodiment 9 to 18 and comparative example 4 to 8

[0052] Examples 9 to 18 and Comparative Examples 4 to 8: Preparation of Etching Compositions

[0053] The components and composition ratios of each etching composition prepared in 180 kg are shown in Table 3 below.

[0054] [table 3]

[0055] CuCl 2

Embodiment 19 to 26 and comparative example 9 to 11

[0062] Examples 19 to 26 and Comparative Examples 9 to 11: Preparation of etching compositions

[0063] The components and composition ratios of each etching composition prepared in 180 kg are shown in Table 5 below.

[0064] [table 5]

[0065] CuCl 2

[0066] Note) C 2 h 5 NO 2 : Glycine

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Abstract

The present invention relates to a wet etchant composition to a multilayer film comprising a copper-based metal layer and a titanium-based metal layer. The etchant composition of the present invention provides an excellent etching profile in case of etching said multilayer film, and minimizes the damage of a glass substrate and a lower insulating layer and the generation of residue, thereby enabling the stable performance of a subsequent process.

Description

technical field [0001] The invention relates to an etching composition for wet etching a multilayer film comprising a copper-based metal film and a titanium-based metal film. Background technique [0002] Generally, in semiconductor devices and flat panel displays, a method of forming metal wiring on a substrate includes the following steps: forming a metal film by sputtering; coating a photoresist material on the metal film; exposing and developing a selected area of ​​the photoresist material To form a resist pattern; etch a metal film. The method may further comprise cleaning processes before and after each individual unit process. [0003] Here, the etching process is a process of selectively removing a metal film using a photoresist mask. The etching process is generally a dry etching process using plasma or a wet etching process using an etchant. [0004] Recently, in semiconductor devices and flat panel displays, the resistance of metal wirings has drawn considerab...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08C23F1/18
CPCH01L21/32134C23F1/18C23F1/44C23F1/26C23F1/02
Inventor 梁承宰林玟基权五柄李喻珍刘仁浩朴英哲慎蕙驘李俊雨
Owner DONGWOO FINE CHEM CO LTD
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