Graphite preheating piece, semiconductor preheating device, silicon core furnace and phosphorus detection furnace

A technology of graphite preheating sheet and preheating device is applied in the fields of graphite preheating sheet, silicon core furnace, phosphorus inspection furnace and semiconductor preheating device, which can solve the problems of easy fusing of molybdenum wire, slow heating speed and reduced reliability. , to achieve the effect of avoiding pollution, avoiding energy waste, and ensuring accuracy

Inactive Publication Date: 2014-12-10
江西赛维LDK太阳能多晶硅有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] 1. The above two methods use heat transfer or heat radiation, which not only has a slow heating rate, but also has a low energy utilization rate.
[0008] 2. The preheating effect of method 2 is difficult to confirm in time, that is, it is difficult to find out whether it has reached the predetermined state in real time
[0009] 3. Method one is suitable for preheating when drawing a single silicon core at one time, while method two can be used for preheating the masterbatch in a silicon core furnace that draws multiple silicon cores at one time, but the molybdenum wire is easy to fuse. cause a decrease in reliability

Method used

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  • Graphite preheating piece, semiconductor preheating device, silicon core furnace and phosphorus detection furnace
  • Graphite preheating piece, semiconductor preheating device, silicon core furnace and phosphorus detection furnace
  • Graphite preheating piece, semiconductor preheating device, silicon core furnace and phosphorus detection furnace

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Embodiment 1

[0033] This embodiment firstly provides a semiconductor preheating device, which is used for preheating the semiconductor masterbatch during the semiconductor manufacturing process. This embodiment and other embodiments will take silicon as an example to describe the structure and functional characteristics of the semiconductor preheating device of the present invention in detail. It should be noted that this preheating device is also suitable for preheating semiconductor materials such as germanium, and will not be described in detail here.

[0034] refer to image 3 As shown, the semiconductor preheating device 1 of this embodiment is arranged inside the silicon core furnace, includes a high frequency coil 11, and also includes a graphite preheater 12 coaxially arranged with the high frequency coil 11, and the graphite preheater 12 is placed The lower edge of the high frequency coil 11, but not in contact with the high frequency coil 11.

[0035] like Figure 4 As shown, ...

Embodiment 2

[0038] refer to Figure 5 As shown, this embodiment provides another semiconductor preheating device 10, which differs from the semiconductor preheating device 1 described in Embodiment 1 in that the semiconductor preheating device 10 of this embodiment also includes a preheating Sheet extraction device 20, preheating sheet extraction device 20 includes a control rod 13, one end of the control rod 13 stretches out of the silicon core furnace, and the other end is connected with the handle 123 provided on the graphite preheating 12 sheets, The graphite preheating sheet 12 is drawn out of the silicon core furnace through the control rod 13 .

[0039] In addition, in the semiconductor preheating device 10 of this embodiment, a power monitor 14 is connected to the high-frequency coil 11 for real-time monitoring of the output power of the high-frequency coil 11. When the master material 3 reaches a certain temperature, it becomes a magnetic conductor , and produce an eddy current ...

Embodiment 3

[0042] refer to Image 6 As shown, this embodiment provides a silicon core furnace 2 capable of drawing multiple silicon cores at a time. The silicon core furnace 2 includes the semiconductor preheating device 10 described in Embodiment 2, and also includes a furnace body 21 and a seed Crystal fixtures. The seed crystal fixing device is a graphite sleeve 22, and the graphite sleeve 22 is provided with a plurality of stations where the seed crystal 4 can be installed; a rod-shaped masterbatch 3 is placed in the furnace body 21 . In the silicon core furnace 2 of this embodiment, the semiconductor preheating device 10 is located between the graphite sleeve 22 and the master material 3 , and the three are on the same vertical line. The masterbatch 3 is placed upright or fixed in the furnace body 21 , and is located directly below the graphite preheating sheet 12 .

[0043] As mentioned above, the seed crystal 4 is a fine silicon rod used to make the melted master material 3 grow...

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PUM

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Abstract

The embodiment of the invention discloses a graphite preheating device and a semiconductor preheating device. The graphite preheating piece comprises a body, wherein multiple through holes are arranged on the body. The semiconductor preheating device is located in a silicon core furnace and comprises a high-frequency coil and the graphite preheating piece coaxial with the high-frequency coil. The embodiment of the invention also provides the silicon core furnace and a phosphorus detection furnace using the semiconductor preheating device. Through the graphite preheating piece disclosed by the embodiment of the invention, a magnetic line from the high-frequency coil can pass through the through holes to reach the master batch, and an eddy effect is generated after the master batch becomes a magnetizer due to certain degree of temperature rise so that the master batch is quickly molten.

Description

technical field [0001] The invention relates to equipment and accessories for preparing semiconductors, in particular to a graphite preheating sheet, a semiconductor preheating device, a silicon core furnace and a phosphorus detection furnace. Background technique [0002] When preparing semiconductor materials such as silicon cores by the Czochralski method or the zone melting method, it is usually necessary to first melt the master material such as the primary polycrystalline silicon rod or the Czochralski polycrystalline silicon rod. At present, the commonly used melting heating method is electric induction heating, that is, heating with a high-frequency coil to make it melt. However, since silicon is a semiconductor, it does not conduct electricity at room temperature and does not generate eddy currents in a high-frequency magnetic field. Only when it is heated to a certain value and silicon becomes a magnetic conductor can it generate eddy current effects and heat up an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B35/00C30B15/14C30B13/18C30B13/28C30B15/20H01L21/67
Inventor 曹泽俊刘华
Owner 江西赛维LDK太阳能多晶硅有限公司
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