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Thin film temperature measurement method based on ellipsometer

A measurement method and technology of film temperature, applied in the direction of thermometers, thermometers, measuring devices, etc. with physical/chemical changes, can solve problems such as powerlessness, and achieve the effect of high measurement accuracy

Active Publication Date: 2013-08-21
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But what they measure is the real-time temperature of the object, and they are helpless for the non-real-time temperature of the object

Method used

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  • Thin film temperature measurement method based on ellipsometer
  • Thin film temperature measurement method based on ellipsometer
  • Thin film temperature measurement method based on ellipsometer

Examples

Experimental program
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example 1

[0021] Example 1: Thin film growth temperature measurement, i.e. non-real-time temperature measurement [[ix]]

[0022] The ZnO film was prepared by ALD (Atomic Layer Deposition) method, using diethyl zinc (DEZn) as the metal source, and water as the oxygen source. The two sources are alternately fed into the reaction chamber, and the reaction equation is:

[0023] ZnOH*+Zn(CH 2 CH 3 ) 2 → ZnOZn(CH 2 CH 3 )*+C 2 h 6 (2)

[0024] Zn(CH 2 CH 3 )*+H 2 O → ZnOH*+C 2 h 6 (3)

[0025] Each reaction step is a saturated surface reaction, and two steps constitute a cycle. In the present invention, the access times of various sources are respectively DEZn:N 2 :H 2 O:N 2 =0.5s:2s:0.5s:2s.

[0026] The standard temperature-refractive index spectrum of ZnO thin film measured by Sopra GES-5E type ellipsometer is as follows figure 2 shown.

[0027] From figure 2 It can be seen that different temperatures do have an impact on the refractive ...

example 2

[0035] Example 2: Real-time temperature measurement of thin films [[x]]

[0036] SiO grown by thermal evaporation x / SiO 2 (1[5] Measure the refractive index spectrum of the thin film. The difference from Example 1 is that Example 2 does not change the growth temperature of the sample film, but changes the temperature of the film during the measurement. This temperature will also have an impact on the physical properties of the film, directly resulting in the refractive index spectrum measured by the ellipsometer changes so that the method of the invention can be applied. Its refractive index spectrum fitted by computer is as follows Figure 4 shown.

[0037] The temperature sampling interval of the standard refractive index spectrum is about 50 o C. It can be seen from the figure that the curves are clearly distinguished after the wavelength of 290 nm, so there is a high degree of confidence when matching with the least squares method. However, since the temperature s...

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Abstract

The invention belongs to the technical field of temperature measurement, and in particular relates to a thin film temperature measurement method based on an ellipsometer. The thin film temperature measurement method comprises the following steps of: measuring a refractive index spectrum line and a standard refractive index spectrum line of a measured thin film by using the ellipsometer, comparingthe refractive index spectrum line with the standard refractive index spectrum line, obtaining an optimal match curve by using a least square method, and consequentially obtaining the temperature value of the measured thin film according to the temperature value corresponding to the standard spectrum line. According to the thin film temperature measurement method provided by the invention, real-time or non-real-time temperature of a solid thin film can be measured indirectly and losslessly. The thin film material is not damaged in the measurement process; and when the experimental condition is not changed obviously, the thin film temperature measurement method has a higher confidence coefficient. When the temperature interval of the standard refractive index spectrum line is set to be smaller, the thin film temperature measurement method has a higher precision.

Description

technical field [0001] The invention belongs to the technical field of temperature measurement, and in particular relates to a method for measuring the temperature of a film by using an ellipsometer. Background technique [0002] Accurately measuring the temperature of thin films is an important technique for studying thin film materials. For example, in thin film processes such as molecular beam epitaxy, chemical vapor deposition, ion etching, rapid heat treatment and sputtering, the measurement of substrate temperature is particularly important for the control of film quality. Traditional temperature measurement methods mainly include: thermocouple sensor measurement, thermal resistance sensor measurement, etc. But the biggest disadvantage of the two is the contact and damage to the film, and it is not conducive to the local temperature control in the rapid and stable growth of the film. [[i]] At present, photothermal technology, interferometric temperature measurement t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K11/00
Inventor 张荣君郑玉祥陈良尧张帆林崴耿阳卢红亮
Owner FUDAN UNIV