Semiconductor device

Abstract

A semiconductor device including a silicon substrate, a plurality of silicon nanowire clusters, a first circuit layer and a second circuit layer. The silicon substrate has a first surface, a second surface opposite to the first surface and a plurality of through holes. The silicon nanowire clusters are disposed in the through holes of the silicon substrate, respectively. The first circuit layer is disposed on the first surface and connected to the silicon nanowire clusters. The second circuit layer is disposed on the second surface and connected to the silicon nanowire clusters.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device with a thermoelectric cooling mechanism. Background technique [0002] The future trend of packaging manufacturing technology will be towards high-precision manufacturing technology such as high power, high density, low cost, light, thin, short, and small, and the technology of 3D stacked IC (3D stacked IC) is for this purpose , one of the most serious challenges is the problem of heat. The formation of local high-temperature regions and hot spots in the 3D stacked chip will cause temperature and stress concentration and lead to thermal stress problems, which will affect the reliability of the product and become the bottleneck of the 3D stacked chip technology. According to the research, the hot spot problem will greatly increase the heat dissipation demand of the chip, so that the thermal resistance value of the heat dissipation element needs to b...

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a semiconductor device that can solve the problem of insufficient heat dissipation efficiency of high-density packaging components

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