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Etching liquor used for etching microwave dielectric film and preparation method thereof

A technology of microwave medium and etching solution, which is applied in the field of microelectronics, can solve the problems of limiting the application of thin films containing rare earth oxide dielectrics, and achieve the effect of small side etching ratio and clear edges

Active Publication Date: 2012-07-11
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Regarding the etching of dielectric thin films, the wet etching solution reported in Chinese patent ZL200810045321.8 uses hydrofluoric acid, water and HNO 3 The mixed solution of this etching solution can only etch dielectric films that do not contain rare earth oxides, which greatly limits the application of dielectric films containing rare earth oxides.

Method used

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  • Etching liquor used for etching microwave dielectric film and preparation method thereof
  • Etching liquor used for etching microwave dielectric film and preparation method thereof
  • Etching liquor used for etching microwave dielectric film and preparation method thereof

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Embodiment Construction

[0018] Using the present invention to etch BaO-Nd 2 o 3 -Sm 2 o 3 -TiO 2 Department of (referred to as BNST) microwave dielectric thin film material. The etching solution raw materials are: hydrofluoric acid (HF); boric acid (H 3 BO 3 ); nitric acid (HNO 3 ); water (H 2 O).

[0019] Preparation ratio and steps:

[0020] The first step is to prepare a HF solution with a mass ratio of 20%, HF:H 2 O=1:1.

[0021] The second step prepares the mass ratio as 12.9% H 3 BO 3 solution, H 3 BO 3 :H 2 O=3:20 (requires 60°C water bath heating).

[0022] The third step is to prepare the fluoboric acid solution (HBF 4 ), 20%HF: 12.9%H 3 BO 3 =1:1.2. put 12.9% H 3 BO 3 Pour the solution into a plastic container filled with 20% HF solution, and stir it with a plastic rod while pouring. A large amount of heat will be released during the reaction, and the plastic container needs to be placed in cold water. After the prepared solution has cooled, remove the plastic contain...

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Abstract

The invention provides etching liquor used for etching a microwave dielectric film and a preparation method thereof, relating to the technical field of micro electronics. The etching liquor provided by the invention comprises the components of HBF4, HNO3 and H2O in mass ratio of being 1: x: 5, wherein x is more than or equal to 0.5 and less than or equal to 3, the concentration of HBF4 is 3.2-9.6%, and the concentration of HNO3 is 65-68%. The etching liquor provided by the invention has the beneficial effect that the rare-earth-containing oxide microwave dielectric film etched by adopting the etching liquor provided by the invention has clear edge and low lateral erosion ratio.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to the preparation technology of electronic thin films. Background technique [0002] Dielectric films used in microwave integrated circuits must have a high dielectric constant ε r , high quality factor Q and low resonant frequency temperature coefficient τ f . Dimensions of Microwave Devices and Dielectric Constant ε of Microwave Materials r is inversely proportional to the square root of , so ε r The larger the size, the more likely it is to reduce the size of the microwave device. Any dielectric film has loss. In the case that the conductance loss and radiation loss can be ignored, Q is equal to 1 / tanδ, and tanδ is the dielectric loss. τ f Defined as the change in resonance frequency when the temperature changes by 1°C, general microwave equipment requires as low as possible τ f . Microwave dielectrics containing rare earth oxides have good performance when used...

Claims

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Application Information

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IPC IPC(8): C09K13/10
Inventor 杨传仁张巧真张继华陈宏伟赵强
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA