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Plasma processing apparatus

A technology for processing equipment and plasma, which is applied in the direction of plasma, discharge tubes, electrical components, etc., can solve the problems of thinning the shell thickness and reducing the efficiency of plasma processing, and achieve the effect of preventing the occurrence of

Inactive Publication Date: 2015-04-15
LIGADP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, such a frame causes the formation of an electron dense zone (electron dense zone) under the dielectric window, so the thickness of the envelope becomes thinner and the efficiency of plasma treatment decreases.

Method used

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  • Plasma processing apparatus
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Embodiment Construction

[0028] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, this exemplary embodiment is not limited to the exemplary embodiments disclosed below, but may be implemented in various forms. This exemplary embodiment is provided only so that the disclosure of the present invention will be complete and those of ordinary skill in the art will fully understand the scope of the present invention. In all the drawings, the shapes of components and the like may be exaggerated for clearer illustration, and the same reference numerals denote the same components.

[0029] figure 1 is a schematic side sectional view of a plasma processing apparatus according to an exemplary embodiment of the present invention.

[0030] Such as figure 1 As shown, the plasma processing apparatus according to the exemplary embodiment of the present invention includes a chamber 100 , a susceptor 110 in the chamber 100 fo...

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Abstract

Disclosed is a plasma processing apparatus includes a chamber with a base, wherein a substrate is arranged on the base; a lid frame situated above the base and provided with an outer frame and a support frame; and a plurality of dielectric windows respectively disposed in a plurality of rectangular frames. Each dielectric window includes a first-region dielectric window and a second-region dielectric window. The first-region dielectric window is thicker than the second-region dielectric window, so that the density of electrons under the first-region dielectric window is prevented from being higher than that of electrons under the second-region dielectric window. Therefore, the formation of a dense band of electrons is prevented.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of priority from Korean Patent Application No. 10-2011-0002472 filed on Jan. 10, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention provides a plasma processing apparatus, and more particularly, relates to a plasma processing apparatus capable of uniformly performing plasma processing on the entire area of ​​a substrate. Background technique [0004] Plasma has been used in various processes in the manufacture of semiconductor and display devices, such as deposition, etching, exfoliation, cleaning and other processes. Currently, plasma sources commonly used in semiconductor and display device manufacturing fields include capacitively coupled plasma (CCP) sources and inductively coupled plasma (ICP) sources. [0005] A typical ICP system applies radio frequency (RF) electrical energy between parallel electrodes and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/46
CPCH01J37/3211H01J37/32119H01J37/32715H05H1/46H05H1/4652
Inventor 李荣钟孙亨圭
Owner LIGADP