High-voltage LDMOS (laterally diffused metal oxide semiconductor) device and manufacturing method thereof
A device and high-voltage technology, applied in the field of high-voltage LDMOS devices, can solve the problems of high voltage required for device opening and difficulty in opening, and achieve the effect of reducing on-resistance, high reverse breakdown voltage, and satisfying reverse breakdown voltage
Active Publication Date: 2014-05-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0003] For SCR (Silicon Controlled Rectifiers, silicon-controlled rectifier) devices, due to the characteristics of negative differential resistance under certain conditions, when the device is turned on, it has a strong conductivity and is smaller than the on-resistance, but the device is turned on. Higher voltage required, more difficult to open
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[0032] see figure 1, which is an embodiment of the high voltage LDMOS device of the present invention. The low-doped substrate 9 has a high-voltage deep well 8 and a low-voltage well 6 . The doping type of the high-voltage deep well 8 is opposite to that of the substrate 9, serving as a drift region. The doping type of the low-voltage well 6 is the same as that of the substrate 9, and serves as a body region. There is a well 7 on the surface of the drift region 8, and the doping type of the well 7 is opposite to that of the drift region 8, serving as an inversion layer of the drift region. The surface of the body region 6 has an isolation structure-11a. There is an isolation structure 2 11b on the surface of the drift region 8, and the isolation structure 11b is also on the inversion layer 7 of the drift region. The surface of the drift region 8 also has an isolation structure 3 11c and an isolation structure 4 11d, and neither the isolation structure 3 11c nor the isolati...
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The invention discloses a high-voltage LDMOS (laterally diffused metal oxide semiconductor) device. A special-shaped doped ring surrounding the lead-out end of a heavily-doped drain region is led to the drain end of a common high-voltage LDMOS device; and the drift region, body region and source end of the original LDMOS device form a parasitic SCR (silicon controlled rectifier) device through the special-shaped doped ring. On one hand, the current distribution after the LDMOS is turned on can reduce the turn-on voltage of the parasitic SCR device; and on the other hand, after the parasitic SCR device is turned on, the specific on-resistance of the whole device can be reduced due to the high electric conductivity of the SCR. The high-voltage LDMOS device disclosed by the invention is actually a composite device structure of a common LDMOS device and an SCR device, which sufficiently utilizes the advantages of the LDMOS device and the SCR device, realizes high reverse breakdown voltage and reduces the specific on-resistance of the device under a certain working bias condition.
Description
technical field [0001] The invention relates to a high-voltage LDMOS (Laterally Diffused Metal Oxide Semiconductor, laterally diffused metal oxide semiconductor) device. Background technique [0002] For high-voltage LDMOS devices, breakdown voltage (Breakdowm Voltage, BV) and specific on-resistance (on-resistance, Rsp) are a pair of very important technical indicators that need to be balanced. The withstand voltage and specific on-resistance of high-voltage DMOS devices depend on the compromise between the doping concentration, thickness and drift region length of the epitaxial layer. A high breakdown voltage requires a thick lightly doped epitaxial layer and a long drift region, while a low specific on-resistance requires a thin heavily doped epitaxial layer and a short drift region, so the optimal epitaxial parameters and drift must be selected In order to obtain the minimum specific on-resistance under the premise of satisfying a certain source-drain breakdown voltage. ...
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IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 张帅刘坤董科
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP