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A method and equipment for rapidly annealing alloys for epitaxial wafers

A technology of rapid annealing and epitaxial wafers, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of product quality degradation and low efficiency, and achieve the effect of improving quality, improving efficiency, and rapidly cooling

Active Publication Date: 2017-09-19
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The first technical problem to be solved by the present invention is: In order to overcome the above-mentioned defects of the prior art, the present invention proposes a method for rapidly annealing the epitaxial wafer to solve the problems of the prior art such as low efficiency, low efficiency after annealing the alloy The problem of product quality deterioration
[0005] The second technical problem to be solved by the present invention is: in order to overcome the above-mentioned defects of the prior art, the present invention provides a device for rapid annealing of alloys on epitaxial wafers, which is used to solve the problems of low efficiency and low The problem of product quality deterioration

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  • A method and equipment for rapidly annealing alloys for epitaxial wafers
  • A method and equipment for rapidly annealing alloys for epitaxial wafers

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specific Embodiment approach 1

[0040] figure 1 It is a schematic diagram of the first embodiment of the present invention to realize the rapid annealing alloy of epitaxial wafers. In the figure, 101 is an epitaxial wafer, 102 is a heat conducting plate, 103 is a moving support, and 104 is a heating plate. In this embodiment, the attachment and separation of the heat conduction plate and the heating plate are realized through vertical movement, and the heat conduction plate is a solid structure. In this example, the heat conducting plate is a moving body driven by a moving bracket.

[0041] When the heat conduction plate and the heating plate are separated, the epitaxial wafer 101 is placed on the heat conduction plate 102; when the temperature of the heating plate 104 rises to a certain value, the moving support 103 descends, and when the moving support 103 descends to a certain level, then The heat conduction plate 102 falls on the heating plate 104. At this time, the heat conduction plate 102 is attached...

specific Embodiment approach 2

[0043] figure 2 It is a schematic diagram of the second embodiment of the present invention to realize the rapid annealing alloy of the epitaxial wafer. In this embodiment, the attachment and separation of the heat conduction plate and the heating plate are realized by vertical movement. The heat conduction plate is provided with a hollow structure with space and solid. When the heat conduction plate and the heating plate are attached to heat up, there is no cooling medium in the hollow structure. When the heat conduction plate is separated from the heating plate, in order to achieve rapid cooling, a flow medium can be passed into the hollow structure to speed up the cooling speed. In the figure, 201 is the heating plate, 202 is the heat conduction plate, 203 is the inlet of the cooling medium of the heat conduction plate, 204 is the outlet of the cooling medium of the heat conduction plate, 205 is a movable support for separating and bonding the heat conduction plate and the...

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Abstract

The invention discloses a method and equipment for rapidly annealing alloys for epitaxial wafers, and relates to an annealing alloy process and equipment for semiconductor epitaxial wafers, which are used to solve the problems of low efficiency and poor product quality in the prior art. Technical solutions. It includes the following steps: keeping the heat-conducting plate and the heating plate in a separated state, and placing the epitaxial wafer on the heat-conducting plate; making the temperature of the heating plate reach a preset temperature, making the heat-conducting plate and the heating plate move toward each other, and contacting each other to conduct heat. Exchange; when the temperature and time required for the process are reached, separate the heat-conducting plate from the heating plate, and cool the heat-conducting plate; when the epitaxial wafer drops to the required temperature, remove it. The invention can realize the rapid cooling of the epitaxial wafer, improve the efficiency, and improve the quality of the epitaxial wafer. The method and device of the present invention are suitable for processes such as annealing and alloying of semiconductor epitaxial wafers.

Description

technical field [0001] The invention relates to an annealing alloy process and equipment for semiconductor epitaxial wafers. In particular, it relates to a method and equipment for rapid annealing of light-emitting semiconductor epitaxial wafers. The method and equipment of the invention are suitable for annealing, alloying and other processes of semiconductor epitaxial wafers. Background technique [0002] Alloy annealing of epitaxial wafers is an essential process step in the manufacture of semiconductor devices. Rapid annealing and alloying of epitaxial wafers is conducive to improving the optoelectronic performance and reliability of devices. Especially in the manufacture of InGaAlN vertical structure or flip-chip bonding, metal silver is generally used as the p-type ohmic contact metal, and alloy annealing is carried out on it. The light extraction efficiency of the device is reduced. The general annealing method either realizes the heating of the epitaxial wafer thr...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/324
Inventor 熊传兵江风益方文卿章少华陈鹏
Owner LATTICE POWER (JIANGXI) CORP