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Method for preparing high-temperature resistant hard photomask

A hard mask, high temperature resistant technology, applied in the field of high temperature resistant hard mask preparation, can solve the problem that photoresist cannot be used in high temperature environment, and achieve the effect of low price

Inactive Publication Date: 2012-08-29
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to propose a method for preparing a high temperature resistant hard mask against the limitation that traditional photoresists cannot be used in high temperature environments

Method used

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  • Method for preparing high-temperature resistant hard photomask
  • Method for preparing high-temperature resistant hard photomask
  • Method for preparing high-temperature resistant hard photomask

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Embodiment Construction

[0028] Hereinafter, the present invention is described more specifically in reference examples with reference to the drawings, and the present invention provides preferred embodiments, but should not be construed as being limited to the embodiments set forth herein.

[0029] figure 1 It is shown that a square pattern 101 with a thickness of 1 micron is photoetched on a substrate with a positive photoresist using conventional photolithography technology. The photolithographic pattern should follow the principle: the positive photoresist pattern is consistent with the final pattern. The photoresist residue on the non-photoresist-covered parts of the substrate was then slightly removed in an ion etcher using an oxygen source.

[0030] exist figure 1 On the sample shown, a 200 nm zinc oxide thin film layer 200 was deposited at room temperature using physical vapor deposition (PVD), as figure 2 shown. Afterwards, the sample is immersed in an acetone solution, placed in an ultr...

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Abstract

The invention belongs to the technical field of micro-electronics and particularly provides a method for preparing a high-temperature resistant hard photomask. The high-temperature resistant hard photomask is made of zinc oxide and is particularly prepared in the way that positive photoresist is used to transfer patterns on a substrate through the traditional photolithography, then a zinc oxide film is deposited under ambient temperature, and after the photoresist and the zinc oxide film thereon are removed, patterns contrary to those of the photoresist are left. On that basis, various high-temperature growing materials can be deposited under high temperature as required; and finally, the zinc oxide and material thereon can be removed by low-concentration acid which can corrode zinc oxide quickly but hardly influences the deposited materials, and the purpose that various pattern deposition material structures are formed on the substrate can be achieved at last.

Description

technical field [0001] The invention belongs to the technical field of microelectronics manufacturing, and in particular relates to a method for preparing a high-temperature resistant hard mask plate. Background technique [0002] Photolithography technology is the core of microelectronics technology and the integrated circuit manufacturing technology is the foundation of the electronics industry, and its development and update speed is beyond the reach of other industries. Photolithography is a key process in the fabrication of integrated circuits. Photoresist is coated on semiconductors, conductors and insulators, and the part left after exposure and development protects the bottom layer, and then etched with ultra-clean and high-purity reagents, thus completing the process of transferring the mask pattern to the bottom layer Graphical transfer process. The manufacture of an IC generally needs more than 10 pattern transfer processes to complete. Photoresist and etching t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/68
Inventor 江安全陈志辉孟建伟
Owner FUDAN UNIV