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Nitride based light emitting device using silicon substrate and method of manufacturing the same

A technology for light-emitting devices and nitrides, which can be used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve the problems of unfavorable electrical characteristics of nitride-based light-emitting devices.

Inactive Publication Date: 2012-08-29
SEMIMATERIALS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These dislocations adversely affect the electrical properties of nitride-based light-emitting devices

Method used

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  • Nitride based light emitting device using silicon substrate and method of manufacturing the same
  • Nitride based light emitting device using silicon substrate and method of manufacturing the same
  • Nitride based light emitting device using silicon substrate and method of manufacturing the same

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Embodiment Construction

[0018] Exemplary embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0019] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. . In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present.

[0020] figure 1 is a schematic cross-sectional view of a nitride-based light emitting device according to an exemplary embodiment of the present invention.

[0021] see figure 1 , the nitride-based light emitting device includes a silicon substrate 110 , a seed layer 120 for nitride growth, and a light emitting structure 130 .

[0022] The silicon substrate 110 may be a single crystal silicon substrate with a crystal orientation of 100, 111 or 110. Alternatively, the silicon substrate 110 m...

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Abstract

Disclosed is a nitride-based light emitting device using a silicon substrate. The nitride-based light emitting device includes a silicon (Si) substrate, a seed layer for nitride growth formed on the silicon substrate, and a light emitting structure formed on the seed layer and having a plurality of nitride layers stacked therein. The seed layer for nitride growth is comprised of GaN powders, thereby minimizing occurrence of dislocations caused by a difference in lattice constant between a nitride layer and the silicon substrate. A method of manufacturing the same is also disclosed.

Description

technical field [0001] The present invention relates to a technique for manufacturing a nitride-based light emitting device. Background technique [0002] A light emitting device is a semiconductor device based on the phenomenon of light emission generated when electrons and holes in the device recombine. [0003] For example, nitride-based light emitting devices such as GaN light emitting devices are widely used. Nitride-based light emitting devices can realize various colors due to their high band gap energy. Furthermore, nitride-based light-emitting devices exhibit excellent thermal stability. [0004] Nitride-based light-emitting devices can be classified into lateral type and vertical type according to the arrangement of their internal n-electrodes and p-electrodes. In a lateral structure, n-electrodes and p-electrodes are generally arranged top-to-top, while in a vertical-type structure, n-electrodes and p-electrodes are generally arranged top-bottom. [0005] In t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/02H01L33/16H01L33/00
CPCH01L21/02381H01L21/02439H01L21/02458H01L21/02505H01L21/02513H01L21/0254H01L33/007H01L33/12H01L33/16H01L33/22
Inventor 陈周朴健
Owner SEMIMATERIALS