Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for eliminating load effect of multi sequence single deposition device

A deposition equipment and load effect technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as micro-environment instability, and achieve the effect of avoiding frequent replacement, avoiding load effects, and eliminating load effects.

Inactive Publication Date: 2012-09-12
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to solve the problem of unstable micro-environment in the reaction chamber of multi-station continuous deposition equipment in the prior art, and improve the stability of film thickness, stress, refractive index and other characteristics of the product wafer in the deposition process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for eliminating load effect of multi sequence single deposition device
  • Method for eliminating load effect of multi sequence single deposition device
  • Method for eliminating load effect of multi sequence single deposition device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The method for eliminating the load effect of multi-station continuous deposition equipment of the present invention will be described in more detail below in conjunction with schematic diagrams, wherein a preferred embodiment of the present invention is represented, and it should be understood that those skilled in the art can modify the present invention described here, and The advantageous effects of the invention are still achieved. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0030] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked ou...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for eliminating load effect of a multi sequence single deposition (MSSD) device. A device for eliminating the load effect of the MSSD device comprises a plurality of heaters. The method for eliminating the load effect of the MSSD device includes the following steps of providing a plurality of virtual wafers, placing the virtual wafers in the deposition device; during a depositing process of the deposition device, placing product wafers on all or part of the heaters, and meanwhile, placing the virtual wafers on the heaters without the product wafers; when the deposition device is cleaned, removing all the product wafers on the heaters, and placing the virtual wafers on all the heaters. By the aid of the method, the load effect of the MSSD device can be eliminated, frequent replacing for the virtual wafers placed in the deposition device is avoided, labor force and cost are saved, and simultaneously service life of the heaters is prolonged.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for eliminating the load effect of multi-station continuous deposition equipment. Background technique [0002] In the field of integrated circuit manufacturing, the deposition process is one of the necessary process steps. Among them, the Multi Sequence Single Deposition (MSSD) method has high processing efficiency, so the deposition process of the product wafer by using the multi-sequence continuous deposition equipment has been widely used in the industry. However, in the actual production process, the micro-environment of the product wafer is different at the beginning and end of the deposition process and before and after the periodic cleaning process of the multi-station continuous deposition equipment, resulting in the thickness of the deposited film formed by the deposition process, Stress, refractive index and other characteristics have certain p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205
Inventor 徐强
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com