Accelerated life test circuit and test method of power electronic device

Abstract

The invention discloses an accelerated life test circuit of a power electronic device. One end of a first switch (K1) is connected with a drain (D) of a device to be tested, and the other end of the first switch (K1) is connected with a gate (G) of the device to be tested; one end of a discharge resistor (R1) is connected with the gate (G) of the device to be tested, and the other end of the discharge resistor (R1) is connected with a source (S) of the device to be tested; a positive electrode of a constant current test power supply is connected with the drain (D) of the device to be tested, and a negative electrode of the constant current test power supply is connected with the source (S) of the device to be tested; two input ends of a failure judgment circuit are respectively connected with the positive and negative electrodes of the test power supply; one end of a second switch (K2) is connected with the drain (D) of the device to be tested, and the other end of the second switch (K2) is connected with the positive electrode of a constant current heating power supply; and the negative electrode of the constant current heating power supply is connected with the source (S) of the device to be tested.

Description

technical field [0001] The invention relates to a power cycle life test circuit and a test method of power electronic devices. Background technique [0002] Among the concerns of modern power electronics packaging, the connection reliability of various materials is a major issue. Due to the different thermal expansion coefficients of various packaging materials, the temperature fluctuation caused by the switching loss and on-state loss of the semiconductor chip during the application of the device, or the change of the ambient temperature, will cause such as the bonding wire falling off, the welding layer Fatigue failure problems such as cracks. In order to test the reliability of the device package, accelerated testing methods such as thermal cycle test (passive cycle test) and power cycle test (active cycle test) are usually used in the industry, in which power cycle can more realistically simulate the actual heating mechanism of the chip: pass Control the output of the ...

AI Technical Summary

Problems solved by technology

In order to make the chip junction temperature of the device under test rise to a higher temperature during the short period of time when the switch K1 is closed (usually within 10 seconds), the required heating current Ih will be very large, so based on the traditional method The power cycle test equipment has to be equipped with a heating power supply that can output a large current. However, for testing some high-power power electronic devices, the required heating current often reaches thousands of amperes. In order to obtain such a large output current, it has to be Dozens of power supplies are used in parallel, and the equipment manufacturing cost is very high

[0007] Second, the traditional method cannot accurately detect the time when the gate lead breaks or falls off

It can be seen that there is a large time error from the gate lead breaking or falling off to the failure judgment circuit making a fault judgment, that is, the traditional power cycle test method has defects in the fault judgment of the gate lead

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