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Methods of forming photolithographic patterns

A technology of photolithographic patterns and patterns, which is applied in the field of photoresist compositions, and can solve problems such as poor photospeed and CD uniformity

Active Publication Date: 2014-11-12
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is not a viable overall solution as low molecular weight polymers have been found to exhibit poor photospeed and CD uniformity

Method used

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  • Methods of forming photolithographic patterns
  • Methods of forming photolithographic patterns
  • Methods of forming photolithographic patterns

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0076] Preparation of photoresist composition

[0077] Photoresists used in accordance with the present invention are generally prepared according to known procedures. For example, the photoresist composition of the present invention can be prepared by dissolving photoresist solid components in a solvent component. The ideal total solids content of a photoresist will depend on various factors such as the specific polymers in the composition, final layer thickness and exposure wavelength. Typically the solids content of the photoresist varies from 1 to 10 wt%, more typically from 2 to 5 wt%, based on the total weight of the photoresist composition.

[0078] The photoresist compositions of the present invention find particular utility in negative tone development processes as described below.

[0079] negative tone developing method

[0080] The present invention further provides a method of forming a photoresist relief image and producing an electronic device using the photo...

Embodiment 1

[0103] Example 1: Synthesis of Poly(ECPMA / MCPMA / MNLMA / HADA) (P-1)

[0104] ECPMA (5.092 g), MCPMA (10.967 g), MNLMA (15.661 g) and HADA (8.280 g) monomers were dissolved in 60 g of propylene glycol monomethyl ether acetate (PGMEA). The monomer solution was degassed by bubbling nitrogen for 20 minutes. PGMEA (27.335 g) was added to a 500 mL three-necked flask equipped with a condenser and a mechanical stirrer and degassed by bubbling nitrogen for 20 minutes. The solvent in the reaction flask was then warmed to 80°C. V601 (dimethyl-2,2-azobisisobutyrate) (0.858 g) was dissolved in 8 g PGMEA and the initiator solution was degassed by bubbling nitrogen for 20 minutes. The initiator solution was added to the reaction flask and then the monomer solution was added dropwise to the reactor over a period of three hours under vigorous stirring and nitrogen atmosphere. After the monomer feed was complete, the polymerization mixture was held at 80°C for an additional hour. After the fu...

Embodiment 2

[0106] Example 2: Synthesis of Poly(MCPMA / NLM) (P-2)

[0107] MCPMA (17.234g) and NLM (22.766g) monomers were dissolved in 60g of PGMEA. The monomer solution was degassed by bubbling nitrogen for 20 minutes. PGMEA (31.938 g) was added to a 500 mL three-necked flask equipped with a condenser and a mechanical stirrer and degassed by bubbling nitrogen for 20 minutes. The solvent in the reaction flask was then warmed to 80°C. V601 (dimethyl-2,2-azobisisobutyrate) (2.831 g) was dissolved in 8 g PGMEA and the initiator solution was degassed by bubbling nitrogen for 20 minutes. The initiator solution was added to the reaction flask and then the monomer solution was added dropwise to the reactor over a period of three hours under vigorous stirring and nitrogen atmosphere. After the monomer feed was complete, the polymerization mixture was held at 80°C for an additional hour. After the full four hours of polymerization time (three hour feed and one hour post-feed stirring), the pol...

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Abstract

Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Description

technical field [0001] The present invention relates generally to the fabrication of electronic devices. More specifically, the present invention relates to photoresist compositions, coated substrates, and photolithographic methods that allow the formation of fine patterns using negative tone development processes. Background technique [0002] In the semiconductor manufacturing industry, photoresist materials are used to transfer images to one or more underlying layers (eg, metal, semiconductor, and dielectric layers) distributed over a semiconductor substrate, as well as to the substrate itself. In order to increase the integration density of semiconductor devices and form structures with nanometer (nm) dimensions, photoresists and photolithography process tools with high resolution have been and continue to be developed. [0003] Positive-working chemically amplified photoresists have traditionally been used for high-resolution processing. Such resists typically employ ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/038G03F7/00G03F7/09
CPCG03F7/325G03F7/2041G03F7/091G03F7/11G03F7/0397G03F7/0045G03F7/0392G03F7/26
Inventor Y·C·裴朴钟根李承泫刘沂T·卡多拉西亚R·贝尔
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC